Datasheet > AP70T03GH-HF

AP70T03GH-HF

更新时间： 2024-11-21 01:19:23

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
5页	106K
描述
Simple Drive Requirement

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数据手册

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AP70T03GH-HF 数据手册

AP70T03GH/J-HF

Halogen-Free Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Simple Drive Requirement

BV_DSS

R_DS(ON)

I_D

30V

9mΩ

60A

▼ Low Gate Charge

▼ Fast Switching

▼ RoHS Compliant

Description

AP70T03 series are from Advanced Power innovated design and silicon

process technology to achieve the lowest possible on-resistance and fast

switching performance. It provides the designer with an extreme efficient

device for use in a wide range of power applications.

The TO-252 package is widely preferred for all commercial-industrial

surface mount applications using infrared reflow technique and suited for

high current application due to the low connection resistance. The

through-hole version (AP70T03GJ) are available for low-profile

applications.

TO-252(H)

TO-251(J)

Absolute Maximum Ratings@T =25^oC(unless otherwise specified)

Symbol

Parameter

Drain-Source Voltage

Rating

Units

V_DS

V_GS

Gate-Source Voltage

+20

Continuous Drain Current, V_GS@ 10V

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current¹

195

P_D@T_C=25℃

Total Power Dissipation

Linear Derating Factor

0.36

W/℃

℃

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 175

Thermal Data

Symbol

Parameter

Value

Units

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient (PCB mount)³

Maximum Thermal Resistance, Junction-ambient

2.8

62.5

110

Rthj-a

Data and specifications subject to change without notice

201408266

12 3 4 5

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