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AP70SL1K4BH PDF预览

AP70SL1K4BH

更新时间: 2024-10-31 17:15:55
品牌 Logo 应用领域
富鼎先进 - A-POWER /
页数 文件大小 规格书
6页 73K
描述
TO-252

AP70SL1K4BH 数据手册

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AP70SL1K4BH  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
100% Rg & UIS Test  
BVDSS  
700V  
1.4Ω  
3.2A  
D
S
Fast Switching Characteristic  
RDS(ON)  
3
Simple Drive Requirement  
ID  
G
RoHS Compliant & Halogen-Free  
Description  
AP70SL1K4B series are from Advanced Power innovated design  
and silicon process technology to achieve the lowest possible on-  
resistance and fast switching performance. It provides the designer  
with an extreme efficient device for use in a wide range of power  
applications.  
G
D
S
TO-252(H)  
The TO-252 package is widely preferred for commercial-industrial  
surface mount applications and suited for low voltage applications  
such as DC/DC converters.  
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)  
.
Symbol  
Parameter  
Rating  
Units  
V
VDS  
VGS  
VGS  
Drain-Source Voltage  
700  
Gate-Source Voltage  
+20  
V
Gate-Source Voltage, AC (f > 1Hz)  
Drain Current, VGS @ 10V3  
Drain Current, VGS @ 10V3  
Pulsed Drain Current1  
+30  
3.2  
V
A
ID@TC=25  
ID@TC=100℃  
2.1  
A
IDM  
8.3  
A
dv/dt  
MOSFET dv/dt Ruggedness (VDS = 0 …400V )  
Total Power Dissipation  
Total Power Dissipation4  
20  
V/ns  
W
PD@TC=25℃  
28.4  
2
PD@TA=25℃  
W
EAS  
IAR  
Single Pulse Avalanche Energy5  
27  
mJ  
A
Avalanche Current  
0.6  
EAR  
dv/dt  
TSTG  
TJ  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt6  
Storage Temperature Range  
Operating Junction Temperature Range  
2.84  
15  
mJ  
V/ns  
-55 to 150  
-55 to 150  
Thermal Data  
Symbol  
Parameter  
Value  
Units  
/W  
/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient4  
4.4  
Rthj-a  
62.5  
Data & specifications subject to change without notice  
1
201612201