AP70SL1K4BH
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Rg & UIS Test
BVDSS
700V
1.4Ω
3.2A
D
S
▼ Fast Switching Characteristic
RDS(ON)
3
▼ Simple Drive Requirement
ID
G
▼ RoHS Compliant & Halogen-Free
Description
AP70SL1K4B series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
G
D
S
TO-252(H)
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
.
Symbol
Parameter
Rating
Units
V
VDS
VGS
VGS
Drain-Source Voltage
700
Gate-Source Voltage
+20
V
Gate-Source Voltage, AC (f > 1Hz)
Drain Current, VGS @ 10V3
Drain Current, VGS @ 10V3
Pulsed Drain Current1
+30
3.2
V
A
ID@TC=25℃
ID@TC=100℃
2.1
A
IDM
8.3
A
dv/dt
MOSFET dv/dt Ruggedness (VDS = 0 …400V )
Total Power Dissipation
Total Power Dissipation4
20
V/ns
W
PD@TC=25℃
28.4
2
PD@TA=25℃
W
EAS
IAR
Single Pulse Avalanche Energy5
27
mJ
A
Avalanche Current
0.6
EAR
dv/dt
TSTG
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt6
Storage Temperature Range
Operating Junction Temperature Range
2.84
15
mJ
V/ns
℃
-55 to 150
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
℃/W
℃/W
Rthj-c
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient4
4.4
Rthj-a
62.5
Data & specifications subject to change without notice
1
201612201