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AP2301N-HF PDF预览

AP2301N-HF

更新时间: 2024-02-29 22:30:50
品牌 Logo 应用领域
富鼎先进 - A-POWER 开关光电二极管晶体管
页数 文件大小 规格书
4页 56K
描述
TRANSISTOR SMALL SIGNAL, FET, FET General Purpose Small Signal

AP2301N-HF 技术参数

生命周期:Contact Manufacturer包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.59
其他特性:ULTRA LOW RESISTANCE配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:20 V最大漏源导通电阻:0.13 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:P-CHANNEL表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

AP2301N-HF 数据手册

 浏览型号AP2301N-HF的Datasheet PDF文件第1页浏览型号AP2301N-HF的Datasheet PDF文件第3页浏览型号AP2301N-HF的Datasheet PDF文件第4页 
AP2301N-HF  
Electrical Characteristics@Tj=25oC(unless otherwise specified)  
Symbol  
BVDSS  
RDS(ON)  
Parameter  
Test Conditions  
Min. Typ. Max. Units  
Drain-Source Breakdown Voltage  
Static Drain-Source On-Resistance2 VGS=-4.5V, ID=-2A  
VGS=0V, ID=-250uA  
-20  
-
-
-
-
V
-
-
130 mΩ  
190 mΩ  
VGS=-2.5V, ID=-1A  
VGS(th)  
Gate Threshold Voltage  
VDS=VGS, ID=-250uA  
VDS=-5V, ID=-2A  
VDS=-16V, VGS=0V  
VGS= +12V, VDS=0V  
ID=-2A  
-0.3 -0.7 -1.2  
V
gfs  
Forward Transconductance  
Drain-Source Leakage Current  
-
-
-
-
-
-
-
-
-
-
-
-
-
7
-
-
S
IDSS  
uA  
uA  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
pF  
pF  
pF  
-10  
IGSS  
Gate-Source Leakage  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain ("Miller") Charge  
Turn-on Delay Time  
Rise Time  
-
+30  
Qg  
6
9.6  
Qgs  
Qgd  
td(on)  
tr  
VDS=-10V  
1
-
VGS=-4.5V  
1.7  
7
-
VDS=-10V  
-
ID=-1A  
16  
21  
5
-
td(off)  
tf  
Turn-off Delay Time  
Fall Time  
RG=3.3Ω  
-
-
VGS=-5V  
Ciss  
Coss  
Crss  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
VGS=0V  
520  
70  
55  
830  
VDS=-10V  
f=1.0MHz  
-
Source-Drain Diode  
Symbol  
Parameter  
Forward On Voltage2  
Test Conditions  
IS=-0.83A, VGS=0V  
IS=-2A, VGS=0V,  
Min. Typ. Max. Units  
VSD  
trr  
-
-
-
-
-1.2  
V
ns  
nC  
Reverse Recovery Time  
Reverse Recovery Charge  
14  
6
-
-
Qrr  
dI/dt=100A/µs  
Notes:  
1.Pulse width limited by Max. junction temperature.  
2.Pulse test  
3.Surface mounted on 1 in2 copper pad of FR4 board, t < 5s ; 350/W when mounted on min. copper pad.  
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.  
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.  
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED  
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN.  
2

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