是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | DIE OR CHIP | Reach Compliance Code: | unknown |
风险等级: | 5.92 | 1dB压缩点: | 33 dBm |
构造: | COMPONENT | 最大输入功率 (CW): | 40 dBm |
最大插入损耗: | 1.9 dB | 最小隔离度: | 30 dB |
JESD-609代码: | e0 | 功能数量: | 1 |
准时: | 0.002 µs | 最大工作频率: | 31000 MHz |
最小工作频率: | 23000 MHz | 最高工作温度: | 125 °C |
最低工作温度: | -55 °C | 封装等效代码: | DIE OR CHIP |
端口终止: | REFLECTIVE | 射频/微波设备类型: | SP4T |
子类别: | RF/Microwave Switches | 技术: | GAAS |
端子面层: | Tin/Lead (Sn/Pb) | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
AP02N40H | A-POWER | TRANSISTOR 1.6 A, 400 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT PACKA |
获取价格 |
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AP02N40H/J | A-POWER | Fast Switching Characteristic |
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AP02N40H-HF | A-POWER | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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AP02N40H-J | A-POWER | Fast Switching Characteristic |
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|
AP02N40I-HF | A-POWER | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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AP02N40J | A-POWER | TRANSISTOR 1.6 A, 400 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, ROHS COMPLIANT PACKA |
获取价格 |