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AP02N40H PDF预览

AP02N40H

更新时间: 2024-02-20 19:21:33
品牌 Logo 应用领域
富鼎先进 - A-POWER 开关脉冲晶体管
页数 文件大小 规格书
4页 99K
描述
TRANSISTOR 1.6 A, 400 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT PACKAGE-3, FET General Purpose Power

AP02N40H 技术参数

生命周期:Contact Manufacturer零件包装代码:TO-252
包装说明:SMALL OUTLINE, R-PSSO-G2针数:4
Reach Compliance Code:compliant风险等级:5.67
雪崩能效等级(Eas):5 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:400 V
最大漏极电流 (ID):1.6 A最大漏源导通电阻:5 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-252
JESD-30 代码:R-PSSO-G2元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):3 A
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

AP02N40H 数据手册

 浏览型号AP02N40H的Datasheet PDF文件第2页浏览型号AP02N40H的Datasheet PDF文件第3页浏览型号AP02N40H的Datasheet PDF文件第4页 
AP02N40H/J  
RoHS-compliant Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
100% Avalanche Test  
BVDSS  
RDS(ON)  
ID  
400V  
5Ω  
D
S
Fast Switching Characteristic  
Simple Drive Requirement  
1.6A  
G
G
Description  
AP02N40 uses rugged design with the best combination of fast  
switching and cost-effectiveness.  
D
TO-252(H)  
S
The TO-252 package is widely preferred for all commercial-industrial  
surface mount applications and suited for AC/DC converters. The  
through-hole version (AP02N40J) is available for low-profile  
applications.  
G
D
S
TO-251(J)  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
400  
+30  
1.6  
1
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
V
ID@TC=25  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current1  
A
ID@TC=100℃  
A
IDM  
3
A
PD@TC=25℃  
Total Power Dissipation  
Single Pulse Avalanche Energy2  
33  
5
W
mJ  
A
EAS  
IAR  
Avalanche Current  
1
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
Thermal Data  
Symbol  
Parameter  
Value  
3.8  
Unit  
/W  
/W  
/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient (PCB mount)4  
Rthj-a  
62.5  
110  
Rthj-a  
Maximum Thermal Resistance, Junction-ambient  
Data & specifications subject to change without notice  
1
200902042  

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