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AM80814-005 PDF预览

AM80814-005

更新时间: 2024-11-17 22:05:43
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体射频和微波晶体管雷达
页数 文件大小 规格书
5页 75K
描述
L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS

AM80814-005 技术参数

生命周期:Obsolete包装说明:HERMETIC SEALED, S064, 2 PIN
针数:2Reach Compliance Code:compliant
风险等级:5.84其他特性:HIGH RELIABILITY
外壳连接:BASE最大集电极电流 (IC):1 A
配置:SINGLE最小直流电流增益 (hFE):30
最高频带:L BANDJESD-30 代码:R-CDFM-F2
元件数量:1端子数量:2
最高工作温度:250 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:NPN最大功率耗散 (Abs):23 W
最小功率增益 (Gp):8.5 dB认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子形式:FLAT端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

AM80814-005 数据手册

 浏览型号AM80814-005的Datasheet PDF文件第2页浏览型号AM80814-005的Datasheet PDF文件第3页浏览型号AM80814-005的Datasheet PDF文件第4页浏览型号AM80814-005的Datasheet PDF文件第5页 
AM80814-005  
RF & MICROWAVE TRANSISTORS  
L-BAND RADAR APPLICATIONS  
.
.
.
.
.
.
.
.
REFRACTORY/GOLD METALLIZATION  
EMITTER SITE BALLASTED  
5:1 VSWR CAPABILITY  
LOW THERMAL RESISTANCE  
INPUT/OUTPUT MATCHING  
OVERLAY GEOMETRY  
METAL/CERAMIC HERMETIC PACKAGE  
.310 x .310 2LFL (S064)  
hermetically sealed  
POUT  
5.0 W MIN. WITH 8.5 dB GAIN  
=
ORDER CODE  
AM80814-005  
BRANDING  
80814-5  
PIN CONNECTION  
DESCRIPTION  
The AM80814-005 device is a high power Class  
C transistor specifically designed for L-Band radar  
pulsed driver applications.  
This device is capable of operation over a wide  
range of pulse widths, duty cycles and tempera-  
tures and is capable of withstanding 5:1 output  
VSWR at rated RF conditions. Low thermal re-  
sistance and computerized automatic wire bonding  
techniques ensure high reliability and product con-  
sistency.  
The AM80814-005 is supplied in the IMPAC Her-  
metic Metal/Ceramic package with internal  
Input/Output matching structures.  
1. Collector  
2. Base  
3. Emitter  
4. Base  
°
25 C)  
ABSOLUTE MAXIMUM RATINGS (T  
=
case  
Symbol  
Parameter  
Value  
Unit  
PDISS  
Power Dissipation* (TC 100°C)  
23  
W
IC  
VCC  
TJ  
Device Current*  
1.0  
28  
A
V
Collector-Supply Voltage*  
Junction Temperature (Pulsed RF Operation)  
Storage Temperature  
°
°
250  
C
C
TSTG  
- 65 to +200  
THERMAL DATA  
RTH(j-c)  
Junction-Case Thermal Resistance*  
6.5  
°C/W  
*Applies only to rated RF amplifier operation  
August 1992  
1/5  

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