AM80912-015

更新时间： 2024-11-17 22:05:43

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体射频和微波晶体管电子航空局域网
页数	文件大小	规格书
6页	96K
描述
AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS

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中文翻译

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数据手册

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AM80912-015 数据手册

AM80912-015

RF & MICROWAVE TRANSISTORS

AVIONICS APPLICATIONS

REFRACTORY/GOLD METALLIZATION

EMITTER SITE BALLASTED

:1 VSWR CAPABILITY

∞

LOW THERMAL RESISTANCE

INPUT MATCHING

METAL/CERAMIC HERMETIC PACKAGE

P_OUT= 15 W MIN. WITH 8.1 dB GAIN

BANDWIDTH 255 MHz

.310 x .310 2LFL (S064)

hermetically sealed

ORDER CODE

AM80912-015

BRANDING

80912-15

PIN CONNECTION

DESCRIPTION

The AM80912-015 is designed for specialized

avionics applications, including JTIDS, where

power is provided under pulse formats utilizing

short pulse widths and high burst or overall duty

cycles.

The AM80912-015 is housed in the unique

IMPAC Hermetic Metal/Ceramic package with

1. Collector

2. Base

3. Emitter

4. Base

= 25 C)

ABSOLUTE MAXIMUM RATINGS (T

case

Symbol

Parameter

Value

Unit

P_DISS

Power Dissipation*(T_C≤ 100°C)

I_C

V_CC

T_J

Device Current*

1.8

Collector-Supply Voltage*

Junction Temperature (Pulsed RF Operation)

Storage Temperature

250

T_STG

− 65 to +200

THERMAL DATA

R_TH(j-c)

Junction-Case Thermal Resistance*

3.0

°C/W

*Applies only to rated RF amplifier operation

March 1994

1/6

12 3 4 5 6

中文翻译

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