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AM3406E3R PDF预览

AM3406E3R

更新时间: 2024-10-31 01:15:31
品牌 Logo 应用领域
创瑞 - AITSEMI /
页数 文件大小 规格书
8页 409K
描述
N-CHANNEL ENHANCEMENT MODE

AM3406E3R 数据手册

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AM3406  
AiT Semiconductor Inc.  
www.ait-ic.com  
30V N-CHANNEL ENHANCEMENT MODE  
MOSFET  
DESCRIPTION  
FEATURES  
The AM3406 is the N-Channel logic enhancement  
mode power field effect transistor is produced using  
high cell density. Advanced trench technology to  
provide excellent RDS(ON).  
30V/6.0A, RDS(ON) = 20mΩ(typ.) @VGS = 10V  
30V/4.8A, RDS(ON) = 27mΩ(typ.) @VGS = 4.5V  
Super high density cell design for extremely low  
RDS(ON)  
Exceptional on-resistance and Maximum DC  
current capability  
This high density process is especially tailored to  
minimize on-state resistance. These devices are  
particularly suited for low voltage application, and low  
in-line power loss are needed in a very small outline  
surface mount package.  
This is a Full Green compliance  
Available in SOT-23 Package  
APPLICATIONS  
The AM3406 is available in SOT-23 Package.  
Power Management in Note book  
Portable Equipment  
DSC  
ORDERING INFORMATION  
LCD Display inverter  
Battery Powered System  
DC/DC Converter  
Package Type  
SOT-23  
Part Number  
AM3406E3R  
E3  
AM3406E3VR  
P CHANNEL MOSFET  
R : Tape & Reel  
Note  
V: Green Package  
AiT provides all Pb free products  
Suffix “ V “ means Green Package  
N-Channel  
REV1.0  
- MAR 2011 RELEASED -  
- 1 -  

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