Datasheet > AM29LV081B-80ECB

AM29LV081B-80ECB

更新时间： 2024-11-09 23:04:19

品牌	Logo	应用领域
超微 - AMD		闪存
页数	文件大小	规格书
6页	42K
描述
8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Sector Erase Flash Memory

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AM29LV081B-80ECB 数据手册

ADVANCE INFORMATION

Am29LV081B

8 Megabit (1 M x 8-Bit)

CMOS 3.0 Volt-only Sector Erase Flash Memory

DISTINCTIVE CHARACTERISTICS

■ Optimized architecture for Miniature Card and

■ Unlock Bypass Program Command

mass storage applications

— Reduces overall programming time when

issuing multiple program command sequences

■ Single power supply operation

— Full voltage range: 2.7 to 3.6 volt read and write

operations for battery-powered applications

■ Embedded Algorithms

— Embedded Erase algorithm automatically

preprograms and erases the entire chip or any

combination of designated sectors

— Regulated voltage range: 3.0 to 3.6 volt read and

write operations and for compatibility with high

performance 3.3 volt microprocessors

— Embedded Program algorithm automatically

writes and verifies data at specified addresses

■ Manufactured on 0.35 µm process technology

— Compatible with 0.5 µm Am29LV081 device

■ Minimum 1,000,000 write cycle guarantee per

sector

■ High performance

■ Package option

— Full voltage range: access times as fast as 80 ns

— 40-pin TSOP

— Regulated voltage range: access times as fast

as 70 ns

■ Compatibility with JEDEC standards

■ Ultra low power consumption (typical values at

— Pinout and software compatible with single-

power supply Flash

5 MHz)

— 200 nA Automatic Sleep mode current

— 200 nA standby mode current

— 7 mA read current

— Superior inadvertent write protection

■ Data# Polling and toggle bits

— Provides a software method of detecting

program or erase operation completion

— 15 mA program/erase current

■ Flexible sector architecture

— Sixteen 64 Kbyte sectors

— Supports full chip erase

— Sector Protection features:

■ Ready/Busy# pin (RY/BY#)

— Provides a hardware method of detecting

program or erase cycle completion

■ Erase Suspend/Erase Resume

A hardware method of locking a sector to

prevent any program or erase operations within

that sector

— Suspends an erase operation to read data from,

or program data to, a sector that is not being

erased, then resumes the erase operation

Sectors can be locked in-system or via

programming equipment

■ Hardware reset pin (RESET#)

— Hardware method to reset the device to reading

array data

Temporary Sector Unprotect feature allows code

changes in previously locked sectors

This document contains information on a product under development at Advanced Micro Devices. The information

is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed

product without notice.

Publication# 21525 Rev: A Amendment/0

Issue Date: January 1998

Refer to AMD’s Website (www.amd.com) for the latest information.

12 3 4 5 6

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与AM29LV081B-80ECB相关器件

型号	品牌	获取价格	描述	数据表
AM29LV081B-80ED	SPANSION	获取价格	Flash, 1MX8, 80ns, PDSO40, TSOP-40
AM29LV081B-80EE	AMD	获取价格	8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Sector Erase Flash Memory
AM29LV081B-80EEB	AMD	获取价格	8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Sector Erase Flash Memory
AM29LV081B-80EF	SPANSION	获取价格	Flash, 1MX8, 80ns, PDSO40, TSOP-40
AM29LV081B-80EI	AMD	获取价格	8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Sector Erase Flash Memory
AM29LV081B-80EIB	AMD	获取价格	8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Sector Erase Flash Memory
AM29LV081B-80EK	SPANSION	获取价格	Flash, 1MX8, 80ns, PDSO40, TSOP-40
AM29LV081B-80FC	AMD	获取价格	8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Sector Erase Flash Memory
AM29LV081B-80FCB	AMD	获取价格	8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Sector Erase Flash Memory
AM29LV081B-80FD	SPANSION	获取价格	Flash, 1MX8, 80ns, PDSO40, REVERSE, TSOP-40

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