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AM29F200AB-120FE PDF预览

AM29F200AB-120FE

更新时间: 2024-11-10 18:12:03
品牌 Logo 应用领域
飞索 - SPANSION 光电二极管内存集成电路
页数 文件大小 规格书
39页 465K
描述
Flash, 128KX16, 120ns, PDSO48, REVERSE, TSOP-48

AM29F200AB-120FE 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSOP包装说明:REVERSE, TSOP-48
针数:48Reach Compliance Code:not_compliant
ECCN代码:3A001.A.2.CHTS代码:8542.32.00.51
风险等级:5.67Is Samacsys:N
最长访问时间:120 ns其他特性:BOTTOM BOOT BLOCK
备用内存宽度:8启动块:BOTTOM
命令用户界面:YES数据轮询:YES
耐久性:100000 Write/Erase CyclesJESD-30 代码:R-PDSO-G48
JESD-609代码:e0长度:18.4 mm
内存密度:2097152 bit内存集成电路类型:FLASH
内存宽度:16湿度敏感等级:3
功能数量:1部门数/规模:1,2,1,3
端子数量:48字数:131072 words
字数代码:128000工作模式:ASYNCHRONOUS
最高工作温度:125 °C最低工作温度:-55 °C
组织:128KX16封装主体材料:PLASTIC/EPOXY
封装代码:TSOP1-R封装等效代码:TSSOP48,.8,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):240
电源:5 V编程电压:5 V
认证状态:Not Qualified就绪/忙碌:YES
反向引出线:YES座面最大高度:1.2 mm
部门规模:16K,8K,32K,64K最大待机电流:0.00002 A
子类别:Flash Memories最大压摆率:0.06 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:MILITARY
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:30切换位:YES
类型:NOR TYPE宽度:12 mm
Base Number Matches:1

AM29F200AB-120FE 数据手册

 浏览型号AM29F200AB-120FE的Datasheet PDF文件第2页浏览型号AM29F200AB-120FE的Datasheet PDF文件第3页浏览型号AM29F200AB-120FE的Datasheet PDF文件第4页浏览型号AM29F200AB-120FE的Datasheet PDF文件第5页浏览型号AM29F200AB-120FE的Datasheet PDF文件第6页浏览型号AM29F200AB-120FE的Datasheet PDF文件第7页 
PRELIMINARY  
Am29F200A  
2 Megabit (256 K x 8-Bit/128 K x 16-Bit)  
CMOS 5.0 Volt-only, Boot Sector Flash Memory  
DISTINCTIVE CHARACTERISTICS  
5.0 V ± 10% for read and write operations  
Top or bottom boot block configurations  
available  
— Minimizes system level power requirements  
Embedded Algorithms  
High performance  
— Embedded Erase algorithm automatically  
preprograms and erases the entire chip or any  
combination of designated sectors  
— Access times as fast as 55 ns  
Low power consumption  
— 20 mA typical active read current (byte mode)  
— Embedded Program algorithm automatically  
writes and verifies data at specified addresses  
— 28 mA typical active read current for  
(word mode)  
Minimum 100,000 write/erase cycles guaranteed  
Package options  
— 30 mA typical program/erase current  
— 1 µA typical standby current  
— 44-pin SO  
Sector erase architecture  
— 48-pin TSOP  
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and  
three 64 Kbyte sectors (byte mode)  
Compatible with JEDEC standards  
— Pinout and software compatible with  
single-power-supply flash  
— One 8 Kword, two 4 Kword, one 16 Kword, and  
three 32 Kword sectors (word mode)  
— Superior inadvertent write protection  
— Supports full chip erase  
Data# Polling and Toggle Bit  
— Sector Protection features:  
— Detects program or erase cycle completion  
Ready/Busy# output (RY/BY#)  
A hardware method of locking a sector to  
prevent any program or erase operations within  
that sector  
— Hardware method for detection of program or  
erase cycle completion  
Sectors can be locked via programming  
equipment  
Erase Suspend/Erase Resume  
Temporary Sector Unprotect feature allows code  
changes in previously locked sectors  
— Supports reading data from a sector not being  
erased  
Hardware RESET# pin  
— Resets internal state machine to the reading  
array data  
Publication# 20637 Rev: B Amendment/+4  
Issue Date: January 3, 2000  

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2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
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AM29F200AB-120SE SPANSION

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Flash, 128KX16, 120ns, PDSO44, SOP-44