Datasheet > AM29F200AB-120SI

AM29F200AB-120SI

更新时间： 2024-11-10 05:26:31

品牌	Logo	应用领域
超微 - AMD		闪存
页数	文件大小	规格书
39页	448K
描述
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory

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中文翻译

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数据手册

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AM29F200AB-120SI 数据手册

PRELIMINARY

Am29F200A

2 Megabit (256 K x 8-Bit/128 K x 16-Bit)

CMOS 5.0 Volt-only, Boot Sector Flash Memory

DISTINCTIVE CHARACTERISTICS

■ 5.0 V ± 10% for read and write operations

■ Top or bottom boot block configurations

available

— Minimizes system level power requirements

■ Embedded Algorithms

■ High performance

— Embedded Erase algorithm automatically

preprograms and erases the entire chip or any

combination of designated sectors

— Access times as fast as 55 ns

■ Low power consumption

— 20 mA typical active read current (byte mode)

— Embedded Program algorithm automatically

writes and verifies data at specified addresses

— 28 mA typical active read current for

(word mode)

■ Minimum 100,000 write/erase cycles guaranteed

■ Package options

— 30 mA typical program/erase current

— 1 µA typical standby current

— 44-pin SO

■ Sector erase architecture

— 48-pin TSOP

— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and

three 64 Kbyte sectors (byte mode)

■ Compatible with JEDEC standards

— Pinout and software compatible with

single-power-supply flash

— One 8 Kword, two 4 Kword, one 16 Kword, and

three 32 Kword sectors (word mode)

— Superior inadvertent write protection

— Supports full chip erase

■ Data# Polling and Toggle Bit

— Sector Protection features:

— Detects program or erase cycle completion

■ Ready/Busy# output (RY/BY#)

A hardware method of locking a sector to

prevent any program or erase operations within

that sector

— Hardware method for detection of program or

erase cycle completion

Sectors can be locked via programming

equipment

■ Erase Suspend/Erase Resume

Temporary Sector Unprotect feature allows code

changes in previously locked sectors

— Supports reading data from a sector not being

erased

■ Hardware RESET# pin

— Resets internal state machine to the reading

array data

Publication# 20637 Rev: B Amendment/+3

Issue Date: March 1998

12 3 4 5 6 7...39

中文翻译

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与AM29F200AB-120SI相关器件

型号	品牌	获取价格	描述	数据表
AM29F200AB-120SIB	AMD	获取价格	2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
AM29F200AB-120SK	SPANSION	获取价格	Flash, 128KX16, 120ns, PDSO44, SOP-44
AM29F200AB-150EC	AMD	获取价格	2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
AM29F200AB-150EC	SPANSION	获取价格	Flash, 128KX16, 150ns, PDSO48, TSOP-48
AM29F200AB-150ECB	AMD	获取价格	2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
AM29F200AB-150EE	AMD	获取价格	2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
AM29F200AB-150EEB	AMD	获取价格	2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
AM29F200AB-150EI	AMD	获取价格	2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
AM29F200AB-150EI	SPANSION	获取价格	Flash, 128KX16, 150ns, PDSO48, TSOP-48
AM29F200AB-150EIB	AMD	获取价格	2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory

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