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AM29F100B-120DTC

更新时间： 2024-11-07 22:56:35
品牌 Logo 应用领域
超微 - AMD 闪存
页数 文件大小 规格书
8页 59K
描述
1 Megabit (128 K x 8-Bit/64 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory-Die Revision 1

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AM29F100B-120DTC 数据手册

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SUPPLEMENT  
Am29F100 Known Good Die  
1 Megabit (128 K x 8-Bit/64 K x 16-Bit)  
CMOS 5.0 Volt-only, Boot Sector Flash Memory—Die Revision 1  
DISTINCTIVE CHARACTERISTICS  
■ Single power supply operation  
■ Embedded Algorithms  
— 5.0 V ± 10% for read, erase, and program  
— Embedded Erase algorithm automatically  
pre-programs and erases the chip or any  
combination of designated sector  
operations  
— Simplifies system-level power requirements  
— Embedded Program algorithm automatically  
programs and verifies data at specified address  
■ High performance  
— 120 ns maximum access time  
■ Minimum 100,000 program/erase cycles  
■ Low power consumption  
guaranteed  
— 20 mA typical active read current for byte mode  
— 28 mA typical active read current for word mode  
— 30 mA typical program/erase current  
— 25 µA typical standby current  
■ Compatible with JEDEC standards  
— Pinout and software compatible with  
single-power-supply flash  
— Superior inadvertent write protection  
■ Flexible sector architecture  
■ Data Polling and Toggle Bits  
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and  
one 64 Kbyte sectors (byte mode)  
— Provides a software method of detecting  
program or erase cycle completion  
— One 8 Kword, two 4 Kword, one 16 Kword, and  
one 32 Kword sectors (word mode)  
■ Ready/Busy pin (RY/BY#)  
— Provides a hardware method for detecting  
program or erase cycle completion  
— Any combination of sectors can be erased  
— Supports full chip erase  
■ Erase Suspend/Erase Resume  
■ Top or bottom boot block configurations  
— Suspends an erase operation to read data from,  
or program data to, a sector that is not being  
erased, then resumes the erase operation  
available  
■ Sector protection  
— Hardware-based feature that disables/re-  
enables program and erase operations in any  
combination of sectors  
■ Hardware RESET# pin  
— Hardware method of resetting the device to  
reading array data  
— Sector protection/unprotection can be  
implemented using standard PROM  
programming equipment  
■ Tested to datasheet specifications at  
temperature  
— Temporary Sector Unprotect feature allows in-  
system code changes in protected sectors  
■ Quality and reliability levels equivalent to  
standard packaged components  
Publication# 21235 Rev: B Amendment/0  
Issue Date: January 1998  
12345678

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与AM29F100B-120DTC相关器件

型号 品牌 获取价格 描述 数据表
AM29F100B-120DTC1 AMD

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 		1 Megabit (128 K x 8-Bit/64 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory-Die R
AM29F100B-120DTE AMD

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 		1 Megabit (128 K x 8-Bit/64 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory-Die R
AM29F100B-120DTE1 AMD

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 		1 Megabit (128 K x 8-Bit/64 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory-Die R
AM29F100B-120DTI AMD

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 		1 Megabit (128 K x 8-Bit/64 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory-Die R
AM29F100B-120DTI1 AMD

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 		1 Megabit (128 K x 8-Bit/64 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory-Die R
AM29F100B-120DWC AMD

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 		1 Megabit (128 K x 8-Bit/64 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory-Die R
AM29F100B-120DWC1 AMD

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 		1 Megabit (128 K x 8-Bit/64 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory-Die R
AM29F100B-120DWE AMD

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 		1 Megabit (128 K x 8-Bit/64 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory-Die R
AM29F100B-120DWE1 AMD

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 		1 Megabit (128 K x 8-Bit/64 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory-Die R
AM29F100B-120DWI AMD

获取价格

 		1 Megabit (128 K x 8-Bit/64 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory-Die R

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