Datasheet > AM29F100B-120DWC1

AM29F100B-120DWC1

更新时间： 2024-11-30 22:35:11

品牌	Logo	应用领域
超微 - AMD		闪存
页数	文件大小	规格书
8页	59K
描述
1 Megabit (128 K x 8-Bit/64 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory-Die Revision 1

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SUPPLEMENT

Am29F100 Known Good Die

1 Megabit (128 K x 8-Bit/64 K x 16-Bit)

CMOS 5.0 Volt-only, Boot Sector Flash Memory—Die Revision 1

DISTINCTIVE CHARACTERISTICS

■ Single power supply operation

■ Embedded Algorithms

— 5.0 V ± 10% for read, erase, and program

— Embedded Erase algorithm automatically

pre-programs and erases the chip or any

combination of designated sector

operations

— Simplifies system-level power requirements

— Embedded Program algorithm automatically

programs and verifies data at specified address

■ High performance

— 120 ns maximum access time

■ Minimum 100,000 program/erase cycles

■ Low power consumption

guaranteed

— 20 mA typical active read current for byte mode

— 28 mA typical active read current for word mode

— 30 mA typical program/erase current

— 25 µA typical standby current

■ Compatible with JEDEC standards

— Pinout and software compatible with

single-power-supply flash

— Superior inadvertent write protection

■ Flexible sector architecture

■ Data Polling and Toggle Bits

— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and

one 64 Kbyte sectors (byte mode)

— Provides a software method of detecting

program or erase cycle completion

— One 8 Kword, two 4 Kword, one 16 Kword, and

one 32 Kword sectors (word mode)

■ Ready/Busy pin (RY/BY#)

— Provides a hardware method for detecting

program or erase cycle completion

— Any combination of sectors can be erased

— Supports full chip erase

■ Erase Suspend/Erase Resume

■ Top or bottom boot block configurations

— Suspends an erase operation to read data from,

or program data to, a sector that is not being

erased, then resumes the erase operation

available

■ Sector protection

— Hardware-based feature that disables/re-

enables program and erase operations in any

combination of sectors

■ Hardware RESET# pin

— Hardware method of resetting the device to

reading array data

— Sector protection/unprotection can be

implemented using standard PROM

programming equipment

■ Tested to datasheet specifications at

temperature

— Temporary Sector Unprotect feature allows in-

system code changes in protected sectors

■ Quality and reliability levels equivalent to

standard packaged components

Publication# 21235 Rev: B Amendment/0

Issue Date: January 1998

12 3 4 5 6 7 8

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与AM29F100B-120DWC1相关器件

型号	品牌	获取价格	描述	数据表
AM29F100B-120DWE	AMD	获取价格	1 Megabit (128 K x 8-Bit/64 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory-Die R
AM29F100B-120DWE1	AMD	获取价格	1 Megabit (128 K x 8-Bit/64 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory-Die R
AM29F100B-120DWI	AMD	获取价格	1 Megabit (128 K x 8-Bit/64 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory-Die R
AM29F100B-120DWI1	AMD	获取价格	1 Megabit (128 K x 8-Bit/64 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory-Die R
AM29F100B-120EC	AMD	获取价格	1 Megabit (128 K x 8-bit/64 K x 16-bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
AM29F100B-120ECB	AMD	获取价格	1 Megabit (128 K x 8-bit/64 K x 16-bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
AM29F100B-120EE	AMD	获取价格	1 Megabit (128 K x 8-bit/64 K x 16-bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
AM29F100B-120EEB	AMD	获取价格	1 Megabit (128 K x 8-bit/64 K x 16-bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
AM29F100B-120EI	AMD	获取价格	1 Megabit (128 K x 8-bit/64 K x 16-bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
AM29F100B-120EIB	AMD	获取价格	1 Megabit (128 K x 8-bit/64 K x 16-bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory

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