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AM29F100B-120DTI1 PDF预览

AM29F100B-120DTI1

更新时间: 2024-11-30 22:29:55
品牌 Logo 应用领域
超微 - AMD 闪存
页数 文件大小 规格书
8页 59K
描述
1 Megabit (128 K x 8-Bit/64 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory-Die Revision 1

AM29F100B-120DTI1 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.83最长访问时间:120 ns
其他特性:MIN 100K PROGRAM/ERASE CYCLE; CAN BE CONFG AS 64K X 16; BOTTOM BOOT BLOCK启动块:BOTTOM
JESD-30 代码:X-XUUC-N47内存密度:1048576 bit
内存集成电路类型:FLASH内存宽度:8
功能数量:1端子数量:47
字数:131072 words字数代码:128000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:128KX8
输出特性:3-STATE封装主体材料:UNSPECIFIED
封装代码:DIE封装形状:UNSPECIFIED
封装形式:UNCASED CHIP并行/串行:PARALLEL
编程电压:5 V认证状态:Not Qualified
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:NO LEAD端子位置:UPPER
类型:NOR TYPEBase Number Matches:1

AM29F100B-120DTI1 数据手册

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SUPPLEMENT  
Am29F100 Known Good Die  
1 Megabit (128 K x 8-Bit/64 K x 16-Bit)  
CMOS 5.0 Volt-only, Boot Sector Flash Memory—Die Revision 1  
DISTINCTIVE CHARACTERISTICS  
Single power supply operation  
Embedded Algorithms  
— 5.0 V ± 10% for read, erase, and program  
— Embedded Erase algorithm automatically  
pre-programs and erases the chip or any  
combination of designated sector  
operations  
— Simplifies system-level power requirements  
— Embedded Program algorithm automatically  
programs and verifies data at specified address  
High performance  
— 120 ns maximum access time  
Minimum 100,000 program/erase cycles  
Low power consumption  
guaranteed  
— 20 mA typical active read current for byte mode  
— 28 mA typical active read current for word mode  
— 30 mA typical program/erase current  
— 25 µA typical standby current  
Compatible with JEDEC standards  
— Pinout and software compatible with  
single-power-supply flash  
— Superior inadvertent write protection  
Flexible sector architecture  
Data Polling and Toggle Bits  
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and  
one 64 Kbyte sectors (byte mode)  
— Provides a software method of detecting  
program or erase cycle completion  
— One 8 Kword, two 4 Kword, one 16 Kword, and  
one 32 Kword sectors (word mode)  
Ready/Busy pin (RY/BY#)  
— Provides a hardware method for detecting  
program or erase cycle completion  
— Any combination of sectors can be erased  
— Supports full chip erase  
Erase Suspend/Erase Resume  
Top or bottom boot block configurations  
— Suspends an erase operation to read data from,  
or program data to, a sector that is not being  
erased, then resumes the erase operation  
available  
Sector protection  
— Hardware-based feature that disables/re-  
enables program and erase operations in any  
combination of sectors  
Hardware RESET# pin  
— Hardware method of resetting the device to  
reading array data  
— Sector protection/unprotection can be  
implemented using standard PROM  
programming equipment  
Tested to datasheet specifications at  
temperature  
Temporary Sector Unprotect feature allows in-  
system code changes in protected sectors  
Quality and reliability levels equivalent to  
standard packaged components  
Publication# 21235 Rev: B Amendment/0  
Issue Date: January 1998  

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