Datasheet > AM29F017B-150F4E

AM29F017B-150F4E

更新时间： 2024-11-02 23:29:31

品牌	Logo	应用领域
其他 - ETC		闪存可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
39页	889K
描述
x8 Flash EEPROM

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AM29F017B-150F4E 数据手册

Am29F017B

16 Megabit (2 M x 8-Bit)

CMOS 5.0 Volt-only, Uniform Sector Flash Memory

DISTINCTIVE CHARACTERISTICS

■ Optimized for memory card applications

■ Minimum 1,000,000 program/erase cycles per

sector guaranteed

— Backwards-compatible with the Am29F016C

■ 20-year data retention at 125°C

— Reliable operation for the life of the system

■ Package options

■ 5.0 V ± 10%, single power supply operation

— Minimizes system level power requirements

■ Manufactured on 0.32 µm process technology

■ High performance

— 40-pin TSOP

— 48-pin TSOP

— Access times as fast as 70 ns

■ Compatible with JEDEC standards

■ Low power consumption

— Pinout and software compatible with

single-power-supply Flash standard

— 25 mA typical active read current

— 30 mA typical program/erase current

— Superior inadvertent write protection

— 1 µA typical standby current (standard access

time to active mode)

■ Data# Polling and toggle bits

— Provides a software method of detecting

program or erase cycle completion

■ Flexible sector architecture

— 32 uniform sectors of 64 Kbytes each

— Any combination of sectors can be erased.

— Supports full chip erase

■ Ready/Busy# output (RY/BY#)

— Provides a hardware method for detecting

program or erase cycle completion

— Group sector protection:

■ Erase Suspend/Erase Resume

A hardware method of locking sector groups to

prevent any program or erase operations within

that sector group

— Suspends a sector erase operation to read data

from, or program data to, a non-erasing sector,

then resumes the erase operation

Temporary Sector Group Unprotect allows code

changes in previously locked sectors

■ Hardware reset pin (RESET#)

— Resets internal state machine to the read mode

■ Embedded Algorithms

— Embedded Erase algorithm automatically

preprograms and erases the entire chip or any

combination of designated sectors

— Embedded Program algorithm automatically

writes and verifies bytes at specified addresses

Publication# 21195 Rev: D Amendment/0

Issue Date: November 16, 1999

This Data Sheet states AMD’s current technical specifications regarding the Product described herein. This Data

Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.

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与AM29F017B-150F4E相关器件

型号	品牌	获取价格	描述	数据表
AM29F017B-150F4I	ETC	获取价格	x8 Flash EEPROM
AM29F017B-150FC	AMD	获取价格	16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F017B-150FCB	AMD	获取价格	16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F017B-150FE	AMD	获取价格	16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F017B-150FEB	AMD	获取价格	16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F017B-150FI	AMD	获取价格	16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F017B-150FIB	AMD	获取价格	16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F017B-70EC	AMD	获取价格	16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F017B-70ECB	AMD	获取价格	16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F017B-70EE	AMD	获取价格	16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory

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