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AM29F017B-70FC PDF预览

AM29F017B-70FC

更新时间: 2024-11-02 23:04:19
品牌 Logo 应用领域
超微 - AMD 内存集成电路光电二极管
页数 文件大小 规格书
35页 418K
描述
16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory

AM29F017B-70FC 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSOP包装说明:REVERSE, TSOP-48
针数:48Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.82Is Samacsys:N
最长访问时间:70 ns其他特性:1000K PROGRAM/ERASE CYCLES MIN
命令用户界面:YES数据轮询:YES
JESD-30 代码:R-PDSO-G48JESD-609代码:e0
内存密度:16777216 bit内存集成电路类型:FLASH
内存宽度:8功能数量:1
部门数/规模:32端子数量:48
字数:2097152 words字数代码:2000000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:2MX8
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:TSSOP48,.8,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:PARALLEL
电源:5 V编程电压:5 V
认证状态:Not Qualified就绪/忙碌:YES
反向引出线:YES部门规模:64K
最大待机电流:0.000005 A子类别:Flash Memories
最大压摆率:0.06 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL切换位:YES
类型:NOR TYPEBase Number Matches:1

AM29F017B-70FC 数据手册

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PRELIMINARY  
Am29F017B  
16 Megabit (2 M x 8-Bit)  
CMOS 5.0 Volt-only, Uniform Sector Flash Memory  
DISTINCTIVE CHARACTERISTICS  
Optimized for memory card applications  
Embedded Algorithms  
— Backwards-compatible with the Am29F016C  
— Embedded Erase algorithm automatically  
preprograms and erases the entire chip or any  
combination of designated sectors  
5.0 V ± 10%, single power supply operation  
— Minimizes system level power requirements  
— Embedded Program algorithm automatically  
writes and verifies bytes at specified addresses  
Manufactured on 0.35 µm process technology  
High performance  
Minimum 1,000,000 program/erase cycles per  
— Access times as fast as 70 ns  
sector guaranteed  
Package options  
Low power consumption  
— 48-pin TSOP  
— 25 mA typical active read current  
— 30 mA typical program/erase current  
Compatible with JEDEC standards  
— Pinout and software compatible with  
single-power-supply Flash standard  
— 1 µA typical standby current (standard access  
time to active mode)  
— Superior inadvertent write protection  
Flexible sector architecture  
— 32 uniform sectors of 64 Kbytes each  
— Any combination of sectors can be erased.  
— Supports full chip erase  
Data# Polling and toggle bits  
— Provides a software method of detecting  
program or erase cycle completion  
Ready/Busy# output (RY/BY#)  
— Group sector protection:  
— Provides a hardware method for detecting  
program or erase cycle completion  
A hardware method of locking sector groups to  
prevent any program or erase operations within  
that sector group  
Erase Suspend/Erase Resume  
Temporary Sector Group Unprotect allows code  
changes in previously locked sectors  
— Suspends a sector erase operation to read data  
from, or program data to, a non-erasing sector,  
then resumes the erase operation  
Hardware reset pin (RESET#)  
— Resets internal state machine to the read mode  
Publication# 21195 Rev: B Amendment/+2  
Issue Date: April 1998  

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