Datasheet > AM29F016B-1

AM29F016B-1

更新时间： 2024-11-01 23:04:19

品牌	Logo	应用领域
超微 - AMD		闪存
页数	文件大小	规格书
8页	186K
描述
16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory-Die Revision 1

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AM29F016B-1 数据手册

SUPPLEMENT

Am29F016B Known Good Die

16 Megabit (2 M x 8-Bit)

CMOS 5.0 Volt-only, Sector Erase Flash Memory—Die Revision 1

DISTINCTIVE CHARACTERISTICS

■ 5.0 V ± 10%, single power supply operation

■ Minimum 100,000 write/erase cycles guaranteed

— Minimizes system level power requirements

■ Compatible with JEDEC standards

— Pinout and software compatible with

single-power-supply Flash standard

■ Manufactured on 0.35 µm process technology

■ High performance

— Superior inadvertent write protection

— 120 ns access time

■ Data# Polling and toggle bits

■ Low power consumption

— Provides a software method of detecting

program or erase cycle completion

— 25 mA typical active read current

— 30 mA typical program/erase current

■ Ready/Busy output (RY/BY#)

— <1 µA typical standby current (standard access

time to active mode)

— Provides a hardware method for detecting

program or erase cycle completion

■ Flexible sector architecture

— 32 uniform sectors of 64 Kbytes each

— Any combination of sectors can be erased.

— Supports full chip erase

■ Erase Suspend/Resume

— Suspends a sector erase operation to read data

from, or program data to, a non-erasing sector,

then resumes the erase operation

— Group sector protection:

■ Hardware reset pin (RESET#)

A hardware method of locking sector groups to

prevent any program or erase operations within

that sector group

— Resets internal state machine to the read mode

■ Tested to datasheet specifications at

temperature

Temporary Sector Group Unprotect allows code

changes in previously locked sectors

■ Quality and reliability levels equivalent to

■ Embedded Algorithms

standard packaged components

— Embedded Erase algorithm automatically

preprograms and erases the entire chip or any

combination of designated sectors

— Embedded Program algorithm automatically

writes and verifies bytes at specified addresses

2/17/98

Publication# 21551 Rev: A Amendment/+1

Issue Date: February 1998

12 3 4 5 6 7 8

中文翻译

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与AM29F016B-1相关器件

型号	品牌	获取价格	描述	数据表
AM29F016B-120DGC1	AMD	获取价格	16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory-Die Revision 1
AM29F016B-120DGC1	SPANSION	获取价格	Flash, 2MX8, 120ns, DIE-37
AM29F016B-120DGI1	AMD	获取价格	16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory-Die Revision 1
AM29F016B-120DGI1	SPANSION	获取价格	Flash, 2MX8, 120ns, DIE-37
AM29F016B-120DPC1	AMD	获取价格	16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory-Die Revision 1
AM29F016B-120DPC1	SPANSION	获取价格	Flash, 2MX8, 120ns, DIE-37
AM29F016B-120DPI1	AMD	获取价格	16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory-Die Revision 1
AM29F016B-120DPI1	SPANSION	获取价格	Flash, 2MX8, 120ns, DIE-37
AM29F016B-120DTC1	AMD	获取价格	16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory-Die Revision 1
AM29F016B-120DTI1	SPANSION	获取价格	Flash, 2MX8, 120ns, DIE-37

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