5秒后页面跳转
AM29F016B-120DTI1 PDF预览

AM29F016B-120DTI1

更新时间: 2024-11-01 22:29:55
品牌 Logo 应用领域
超微 - AMD 闪存内存集成电路
页数 文件大小 规格书
8页 186K
描述
16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory-Die Revision 1

AM29F016B-120DTI1 技术参数

生命周期:Obsolete零件包装代码:DIE
包装说明:DIE,针数:37
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.73
最长访问时间:120 ns其他特性:MINIMUM 100K WRITE/ERASE CYCLE; 20 YEAR DATA RETENTION
数据保留时间-最小值:20JESD-30 代码:R-XUUC-N37
内存密度:16777216 bit内存集成电路类型:FLASH
内存宽度:8功能数量:1
端子数量:37字数:2097152 words
字数代码:2000000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:2MX8封装主体材料:UNSPECIFIED
封装代码:DIE封装形状:RECTANGULAR
封装形式:UNCASED CHIP并行/串行:PARALLEL
编程电压:5 V认证状态:Not Qualified
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:NO LEAD端子位置:UPPER
类型:NOR TYPEBase Number Matches:1

AM29F016B-120DTI1 数据手册

 浏览型号AM29F016B-120DTI1的Datasheet PDF文件第2页浏览型号AM29F016B-120DTI1的Datasheet PDF文件第3页浏览型号AM29F016B-120DTI1的Datasheet PDF文件第4页浏览型号AM29F016B-120DTI1的Datasheet PDF文件第5页浏览型号AM29F016B-120DTI1的Datasheet PDF文件第6页浏览型号AM29F016B-120DTI1的Datasheet PDF文件第7页 
SUPPLEMENT  
Am29F016B Known Good Die  
16 Megabit (2 M x 8-Bit)  
CMOS 5.0 Volt-only, Sector Erase Flash Memory—Die Revision 1  
DISTINCTIVE CHARACTERISTICS  
5.0 V ± 10%, single power supply operation  
Minimum 100,000 write/erase cycles guaranteed  
— Minimizes system level power requirements  
Compatible with JEDEC standards  
— Pinout and software compatible with  
single-power-supply Flash standard  
Manufactured on 0.35 µm process technology  
High performance  
— Superior inadvertent write protection  
— 120 ns access time  
Data# Polling and toggle bits  
Low power consumption  
— Provides a software method of detecting  
program or erase cycle completion  
— 25 mA typical active read current  
— 30 mA typical program/erase current  
Ready/Busy output (RY/BY#)  
— <1 µA typical standby current (standard access  
time to active mode)  
— Provides a hardware method for detecting  
program or erase cycle completion  
Flexible sector architecture  
— 32 uniform sectors of 64 Kbytes each  
— Any combination of sectors can be erased.  
— Supports full chip erase  
Erase Suspend/Resume  
— Suspends a sector erase operation to read data  
from, or program data to, a non-erasing sector,  
then resumes the erase operation  
— Group sector protection:  
Hardware reset pin (RESET#)  
A hardware method of locking sector groups to  
prevent any program or erase operations within  
that sector group  
— Resets internal state machine to the read mode  
Tested to datasheet specifications at  
temperature  
Temporary Sector Group Unprotect allows code  
changes in previously locked sectors  
Quality and reliability levels equivalent to  
Embedded Algorithms  
standard packaged components  
— Embedded Erase algorithm automatically  
preprograms and erases the entire chip or any  
combination of designated sectors  
— Embedded Program algorithm automatically  
writes and verifies bytes at specified addresses  
2/17/98  
Publication# 21551 Rev: A Amendment/+1  
Issue Date: February 1998  

与AM29F016B-120DTI1相关器件

型号 品牌 获取价格 描述 数据表
AM29F016B-120DWC1 AMD

获取价格

16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory-Die Revision 1
AM29F016B-120DWC1 SPANSION

获取价格

Flash, 2MX8, 120ns, DIE-37
AM29F016B-120DWI1 AMD

获取价格

16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory-Die Revision 1
AM29F016B-120DWI1 SPANSION

获取价格

Flash, 2MX8, 120ns, DIE-37
AM29F016B-120E4C ETC

获取价格

x8 Flash EEPROM
AM29F016B-120E4E ETC

获取价格

x8 Flash EEPROM
AM29F016B-120E4EB ETC

获取价格

EEPROM
AM29F016B-120E4I ETC

获取价格

x8 Flash EEPROM
AM29F016B-120EC ETC

获取价格

x8 Flash EEPROM
AM29F016B-120EE ETC

获取价格

x8 Flash EEPROM