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AM29F010A-45JE PDF预览

AM29F010A-45JE

更新时间: 2024-09-19 14:40:51
品牌 Logo 应用领域
飞索 - SPANSION 内存集成电路
页数 文件大小 规格书
31页 415K
描述
Flash, 128KX8, 45ns, PQCC32, PLASTIC, LCC-32

AM29F010A-45JE 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Obsolete零件包装代码:QFJ
包装说明:PLASTIC, LCC-32针数:32
Reach Compliance Code:unknownECCN代码:3A001.A.2.C
HTS代码:8542.32.00.51风险等级:5.71
Is Samacsys:N最长访问时间:45 ns
命令用户界面:YES数据轮询:YES
耐久性:100000 Write/Erase CyclesJESD-30 代码:R-PQCC-J32
长度:13.97 mm内存密度:1048576 bit
内存集成电路类型:FLASH内存宽度:8
湿度敏感等级:1功能数量:1
部门数/规模:8端子数量:32
字数:131072 words字数代码:128000
工作模式:ASYNCHRONOUS最高工作温度:125 °C
最低工作温度:-55 °C组织:128KX8
封装主体材料:PLASTIC/EPOXY封装代码:QCCJ
封装等效代码:LDCC32,.5X.6封装形状:RECTANGULAR
封装形式:CHIP CARRIER并行/串行:PARALLEL
峰值回流温度(摄氏度):225电源:5 V
编程电压:5 V认证状态:Not Qualified
座面最大高度:3.556 mm部门规模:16K
最大待机电流:0.00002 A子类别:Flash Memories
最大压摆率:0.03 mA最大供电电压 (Vsup):5.25 V
最小供电电压 (Vsup):4.75 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:MILITARY端子形式:J BEND
端子节距:1.27 mm端子位置:QUAD
处于峰值回流温度下的最长时间:NOT SPECIFIED切换位:YES
类型:NOR TYPE宽度:11.43 mm
Base Number Matches:1

AM29F010A-45JE 数据手册

 浏览型号AM29F010A-45JE的Datasheet PDF文件第2页浏览型号AM29F010A-45JE的Datasheet PDF文件第3页浏览型号AM29F010A-45JE的Datasheet PDF文件第4页浏览型号AM29F010A-45JE的Datasheet PDF文件第5页浏览型号AM29F010A-45JE的Datasheet PDF文件第6页浏览型号AM29F010A-45JE的Datasheet PDF文件第7页 
Am29F010A  
1 Megabit (128 K x 8-bit)  
CMOS 5.0 Volt-only, Uniform Sector Flash Memory  
DISTINCTIVE CHARACTERISTICS  
Single power supply operation  
Embedded Algorithms  
— 5.0 V ± 10% for read, erase, and program operations  
— Simplifies system-level power requirements  
— Embedded Erase algorithm automatically  
pre-programs and erases the chip or any  
combination of designated sector  
Manufactured on 0.55 µm process technology  
— Embedded Program algorithm automatically  
programs and verifies data at specified address  
— Compatible with 0.85 µm Am29F010 device  
High performance  
Erase Suspend/Resume  
— 45 ns maximum access time  
— Supports reading data from a sector not  
being erased  
Low power consumption  
Minimum 100,000 program/erase cycles  
— 20 mA typical active read current  
— 30 mA typical program/erase current  
— <1 µA typical standby current  
guaranteed  
20-year data retention at 125°C  
— Reliable operation for the life of the system  
Package options  
Flexible sector architecture  
— Eight uniform sectors  
— 32-pin PLCC  
— Any combination of sectors can be erased  
— Supports full chip erase  
— 32-pin TSOP  
Compatible with JEDEC standards  
Sector protection  
— Pinout and software compatible with  
single-power-supply flash  
— Hardware-based feature that disables/re-  
enables program and erase operations in any  
combination of sectors  
— Superior inadvertent write protection  
Data# Polling and Toggle Bits  
— Sector protection/unprotection can be  
implemented using standard PROM  
programming equipment  
— Provides a software method of detecting  
program or erase cycle completion  
Publication# 22181 Rev: B Amendment/+1  
Issue Date: March 23, 1999  
This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data  
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.  

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