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AM29F010-55PE5B PDF预览

AM29F010-55PE5B

更新时间: 2024-09-21 03:11:23
品牌 Logo 应用领域
飞索 - SPANSION 可编程只读存储器电动程控只读存储器电可擦编程只读存储器光电二极管内存集成电路
页数 文件大小 规格书
31页 358K
描述
EEPROM Card, 128KX8, 55ns, Parallel, CMOS, PDIP32, DIP-32

AM29F010-55PE5B 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:not_compliant风险等级:5.92
最长访问时间:55 ns命令用户界面:YES
数据轮询:YES耐久性:1000000 Write/Erase Cycles
JESD-30 代码:R-PDSO-G32JESD-609代码:e0
内存密度:1048576 bit内存集成电路类型:FLASH
内存宽度:8湿度敏感等级:3
部门数/规模:8端子数量:32
字数:131072 words字数代码:128000
最高工作温度:125 °C最低工作温度:-55 °C
组织:128KX8封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装等效代码:TSSOP32,.8,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
并行/串行:PARALLEL电源:5 V
部门规模:16K最大待机电流:0.0001 A
子类别:Flash Memories最大压摆率:0.05 mA
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:MILITARY
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
切换位:YES类型:NOR TYPE

AM29F010-55PE5B 数据手册

 浏览型号AM29F010-55PE5B的Datasheet PDF文件第2页浏览型号AM29F010-55PE5B的Datasheet PDF文件第3页浏览型号AM29F010-55PE5B的Datasheet PDF文件第4页浏览型号AM29F010-55PE5B的Datasheet PDF文件第5页浏览型号AM29F010-55PE5B的Datasheet PDF文件第6页浏览型号AM29F010-55PE5B的Datasheet PDF文件第7页 
FINAL  
Am29F010  
1 Megabit (128 K x 8-bit)  
CMOS 5.0 Volt-only, Uniform Sector Flash Memory  
DISTINCTIVE CHARACTERISTICS  
Single power supply operation  
Embedded Algorithms  
— 5.0 V ± 10% for read, erase, and program  
— Embedded Erase algorithm automatically  
pre-programs and erases the chip or any  
combination of designated sector  
operations  
— Simplifies system-level power requirements  
— Embedded Program algorithm automatically  
programs and verifies data at specified address  
High performance  
— 45 ns maximum access time  
Minimum 100,000 program/erase cycles  
Low power consumption  
guaranteed  
— 30 mA max active read current  
— 50 mA max program/erase current  
— <25 µA typical standby current  
Package options  
— 32-pin PLCC  
— 32-pin TSOP  
— 32-pin PDIP  
Flexible sector architecture  
— Eight uniform sectors  
Compatible with JEDEC standards  
— Any combination of sectors can be erased  
— Supports full chip erase  
— Pinout and software compatible with  
single-power-supply flash  
Sector protection  
— Superior inadvertent write protection  
— Hardware-based feature that disables/re-  
enables program and erase operations in any  
combination of sectors  
Data# Polling and Toggle Bits  
— Provides a software method of detecting  
program or erase cycle completion  
— Sector protection/unprotection can be  
implemented using standard PROM  
programming equipment  
Publication# 16736 Rev: G Amendment/+3  
Issue Date: July 1998  

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