Datasheet > AM28F256

AM28F256

更新时间： 2024-10-30 22:56:31

品牌	Logo	应用领域
超微 - AMD		闪存
页数	文件大小	规格书
35页	467K
描述
256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory

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AM28F256 数据手册

FINAL

Am28F256

256 Kilobit (32 K x 8-Bit)

CMOS 12.0 Volt, Bulk Erase Flash Memory

DISTINCTIVE CHARACTERISTICS

■ High performance

■ Latch-up protected to 100 mA

from –1 V to V +1 V

— 70 ns maximum access time

■ Flasherase Electrical Bulk Chip-Erase

■ CMOS Low power consumption

— 30 mA maximum active current

— 100 µA maximum standby current

— No data retention power consumption

— One second typical chip-erase

■ Flashrite Programming

— 10 µs typical byte-program

— 0.5 second typical chip program

■ Compatible with JEDEC-standard byte-wide

■ Command register architecture for

microprocessor/microcontroller compatible

write interface

32-Pin EPROM pinouts

— 32-pin PDIP

— 32-pin PLCC

■ On-chip address and data latches

— 32-pin TSOP

■ Advanced CMOS flash memory technology

— Low cost single transistor memory cell

■ Automatic write/erase pulse stop timer

■ 10,000 write/erase cycles minimum

■ Write and erase voltage 12.0 V ±5%

GENERAL DESCRIPTION

The Am28F256 is a 256 K Flash memory organized as

32 Kbytes of 8 bits each. AMD’s Flash memories offer

the most cost-effective and reliable read/write non-

volatile random access memory. The Am28F256 is

packaged in 32-pin PDIP, PLCC, and TSOP versions. It

is designed to be reprogrammed and erased in-system

or in standard EPROM programmers. The Am28F256

is erased when shipped from the factory.

The AMD cell is designed to optimize the erase and

programming mechanisms. In addition, the combina-

tion of advanced tunnel oxide processing and low

internal electric fields for erase and programming

operations produces reliable cycling. The Am28F256

uses a 12.0V±5% V

high voltage input to perform

the Flasherase and Flashrite algorithms.

The highest degree of latch-up protection is achieved

with AMD’s proprietary non-epi process. Latch-up

protection is provided for stresses up to 100 milliamps

The standard Am28F256 offers access times as fast as

70 ns, allowing operation of high-speed microproces-

sors without wait states. To eliminate bus contention,

on address and data pins from –1 V to V

+1 V.

the Am28F256 has separate chip enable (CE ) and

The Am28F256 is byte programmable using 10 µs

programming pulses in accordance with AMD’s

Flashrite programming algorithm. The typical room

temperature programming time of the Am28F256 is a

half a second. The entire chip is bulk erased using

10 ms erase pulses according to AMD’s Flasherase

alrogithm. Typical erasure at room temperature is

accomplished in less than one second. The windowed

package and the 15-20 minutes required for EPROM

erasure using ultra-violet light are eliminated.

output enable (OE ) controls.

AMD’s Flash memories augment EPROM functionality

with in-circuit electrical erasure and programming. The

Am28F256 uses a command register to manage this

functionality, while maintaining a standard JEDEC

Flash Standard 32-pin pinout. The command register

allows for 100% TTL level control inputs and fixed

power supply levels during erase and programming.

AMD’s Flash technology reliably stores memory

contents even after 10,000 erase and program cycles.

Publication# 11560 Rev: G Amendment/+2

Issue Date: January 1998

12 3 4 5 6 7...35

中文翻译

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与AM28F256相关器件

型号	品牌	获取价格	描述	数据表
AM28F256-120C3/BUA	ETC	获取价格	x8 Flash EEPROM
AM28F256-120C3/BXA	ETC	获取价格	x8 Flash EEPROM
AM28F256-120C3JC	ETC	获取价格	x8 Flash EEPROM
AM28F256-120C3JI	ETC	获取价格	x8 Flash EEPROM
AM28F256-120C3PC	ETC	获取价格	x8 Flash EEPROM
AM28F256-120C3PI	ETC	获取价格	x8 Flash EEPROM
AM28F256-120EC	AMD	获取价格	256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F256-120ECB	AMD	获取价格	256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F256-120EE	AMD	获取价格	256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F256-120EEB	AMD	获取价格	256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory

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