Datasheet > AM28F256-120ECB

AM28F256-120ECB

更新时间： 2024-09-12 22:35:11

品牌	Logo	应用领域
超微 - AMD		闪存内存集成电路光电二极管
页数	文件大小	规格书
35页	467K
描述
256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

AM28F256-120ECB 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Obsolete	零件包装代码：	TSOP
包装说明：	TSOP1, TSSOP32,.8,20	针数：	32
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8542.32.00.51	风险等级：	5.89
Is Samacsys：	N	最长访问时间：	120 ns
其他特性：	BULK ERASE	命令用户界面：	YES
数据轮询：	NO	耐久性：	10000 Write/Erase Cycles
JESD-30 代码：	R-PDSO-G32	JESD-609代码：	e0
长度：	18.4 mm	内存密度：	262144 bit
内存集成电路类型：	FLASH	内存宽度：	8
功能数量：	1	端子数量：	32
字数：	32768 words	字数代码：	32000
工作模式：	ASYNCHRONOUS	最高工作温度：	70 °C
最低工作温度：		组织：	32KX8
封装主体材料：	PLASTIC/EPOXY	封装代码：	TSOP1
封装等效代码：	TSSOP32,.8,20	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE, THIN PROFILE	并行/串行：	PARALLEL
峰值回流温度（摄氏度）：	NOT SPECIFIED	电源：	5 V
编程电压：	12 V	认证状态：	Not Qualified
座面最大高度：	1.2 mm	最大待机电流：	0.0001 A
子类别：	Flash Memories	最大压摆率：	0.03 mA
最大供电电压 (Vsup)：	5.5 V	最小供电电压 (Vsup)：	4.5 V
标称供电电压 (Vsup)：	5 V	表面贴装：	YES
技术：	CMOS	温度等级：	COMMERCIAL
端子面层：	Tin/Lead (Sn/Pb)	端子形式：	GULL WING
端子节距：	0.5 mm	端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	切换位：	NO
类型：	NOR TYPE	宽度：	8 mm
Base Number Matches：	1

AM28F256-120ECB 数据手册

FINAL

Am28F256

256 Kilobit (32 K x 8-Bit)

CMOS 12.0 Volt, Bulk Erase Flash Memory

DISTINCTIVE CHARACTERISTICS

■ High performance

■ Latch-up protected to 100 mA

from –1 V to V +1 V

— 70 ns maximum access time

■ Flasherase Electrical Bulk Chip-Erase

■ CMOS Low power consumption

— 30 mA maximum active current

— 100 µA maximum standby current

— No data retention power consumption

— One second typical chip-erase

■ Flashrite Programming

— 10 µs typical byte-program

— 0.5 second typical chip program

■ Compatible with JEDEC-standard byte-wide

■ Command register architecture for

microprocessor/microcontroller compatible

write interface

32-Pin EPROM pinouts

— 32-pin PDIP

— 32-pin PLCC

■ On-chip address and data latches

— 32-pin TSOP

■ Advanced CMOS flash memory technology

— Low cost single transistor memory cell

■ Automatic write/erase pulse stop timer

■ 10,000 write/erase cycles minimum

■ Write and erase voltage 12.0 V ±5%

GENERAL DESCRIPTION

The Am28F256 is a 256 K Flash memory organized as

32 Kbytes of 8 bits each. AMD’s Flash memories offer

the most cost-effective and reliable read/write non-

volatile random access memory. The Am28F256 is

packaged in 32-pin PDIP, PLCC, and TSOP versions. It

is designed to be reprogrammed and erased in-system

or in standard EPROM programmers. The Am28F256

is erased when shipped from the factory.

The AMD cell is designed to optimize the erase and

programming mechanisms. In addition, the combina-

tion of advanced tunnel oxide processing and low

internal electric fields for erase and programming

operations produces reliable cycling. The Am28F256

uses a 12.0V±5% V

high voltage input to perform

the Flasherase and Flashrite algorithms.

The highest degree of latch-up protection is achieved

with AMD’s proprietary non-epi process. Latch-up

protection is provided for stresses up to 100 milliamps

The standard Am28F256 offers access times as fast as

70 ns, allowing operation of high-speed microproces-

sors without wait states. To eliminate bus contention,

on address and data pins from –1 V to V

+1 V.

the Am28F256 has separate chip enable (CE ) and

The Am28F256 is byte programmable using 10 µs

programming pulses in accordance with AMD’s

Flashrite programming algorithm. The typical room

temperature programming time of the Am28F256 is a

half a second. The entire chip is bulk erased using

10 ms erase pulses according to AMD’s Flasherase

alrogithm. Typical erasure at room temperature is

accomplished in less than one second. The windowed

package and the 15-20 minutes required for EPROM

erasure using ultra-violet light are eliminated.

output enable (OE ) controls.

AMD’s Flash memories augment EPROM functionality

with in-circuit electrical erasure and programming. The

Am28F256 uses a command register to manage this

functionality, while maintaining a standard JEDEC

Flash Standard 32-pin pinout. The command register

allows for 100% TTL level control inputs and fixed

power supply levels during erase and programming.

AMD’s Flash technology reliably stores memory

contents even after 10,000 erase and program cycles.

Publication# 11560 Rev: G Amendment/+2

Issue Date: January 1998

12 3 4 5 6 7...35

中文翻译

下载PDF

与AM28F256-120ECB相关器件

型号	品牌	获取价格	描述	数据表
AM28F256-120EE	AMD	获取价格	256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F256-120EEB	AMD	获取价格	256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F256-120EI	AMD	获取价格	256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F256-120EIB	AMD	获取价格	256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F256-120FC	AMD	获取价格	256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F256-120FCB	AMD	获取价格	256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F256-120FE	AMD	获取价格	256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F256-120FEB	AMD	获取价格	256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F256-120FI	AMD	获取价格	256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F256-120FIB	AMD	获取价格	256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory

与AM28F256-120ECB相关文章

SL74HC10N：高性能三输入与非门解析
2024-09-03

78
AIC1781A 电池充电控制器深度解析
2024-09-03

69
Pickering新高压舌簧继电器亮相汽车测试博览会
2024-08-26

100
采用MCU+MPU双处理器架构实现的创新应用设计探索
2024-08-23

114

产品中心

服务支持

精选活动

关于我们

帮助中心

AM28F256-120ECB

AM28F256-120ECB 技术参数

AM28F256-120ECB 数据手册

与AM28F256-120ECB相关器件

与AM28F256-120ECB相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

AM28F256-120ECB

AM28F256-120ECB 技术参数

AM28F256-120ECB 数据手册

与AM28F256-120ECB相关器件

与AM28F256-120ECB相关文章

您还可以找

您在本页遇到什么问题？