Datasheet > AM28F256-120EIB

AM28F256-120EIB

更新时间： 2024-10-30 22:35:15

品牌	Logo	应用领域
超微 - AMD		闪存
页数	文件大小	规格书
35页	467K
描述
256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory

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AM28F256-120EIB 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Obsolete	零件包装代码：	TSOP
包装说明：	TSOP1, TSSOP32,.8,20	针数：	32
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8542.32.00.51	风险等级：	5.89
最长访问时间：	120 ns	其他特性：	BULK ERASE
命令用户界面：	YES	数据轮询：	NO
耐久性：	10000 Write/Erase Cycles	JESD-30 代码：	R-PDSO-G32
JESD-609代码：	e0	长度：	18.4 mm
内存密度：	262144 bit	内存集成电路类型：	FLASH
内存宽度：	8	功能数量：	1
端子数量：	32	字数：	32768 words
字数代码：	32000	工作模式：	ASYNCHRONOUS
最高工作温度：	85 °C	最低工作温度：	-40 °C
组织：	32KX8	封装主体材料：	PLASTIC/EPOXY
封装代码：	TSOP1	封装等效代码：	TSSOP32,.8,20
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE, THIN PROFILE
并行/串行：	PARALLEL	峰值回流温度（摄氏度）：	NOT SPECIFIED
电源：	5 V	编程电压：	12 V
认证状态：	Not Qualified	座面最大高度：	1.2 mm
最大待机电流：	0.0001 A	子类别：	Flash Memories
最大压摆率：	0.03 mA	最大供电电压 (Vsup)：	5.5 V
最小供电电压 (Vsup)：	4.5 V	标称供电电压 (Vsup)：	5 V
表面贴装：	YES	技术：	CMOS
温度等级：	INDUSTRIAL	端子面层：	Tin/Lead (Sn/Pb)
端子形式：	GULL WING	端子节距：	0.5 mm
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
切换位：	NO	类型：	NOR TYPE
宽度：	8 mm	Base Number Matches：	1

AM28F256-120EIB 数据手册

FINAL

Am28F256

256 Kilobit (32 K x 8-Bit)

CMOS 12.0 Volt, Bulk Erase Flash Memory

DISTINCTIVE CHARACTERISTICS

■ High performance

■ Latch-up protected to 100 mA

from –1 V to V +1 V

— 70 ns maximum access time

■ Flasherase Electrical Bulk Chip-Erase

■ CMOS Low power consumption

— 30 mA maximum active current

— 100 µA maximum standby current

— No data retention power consumption

— One second typical chip-erase

■ Flashrite Programming

— 10 µs typical byte-program

— 0.5 second typical chip program

■ Compatible with JEDEC-standard byte-wide

■ Command register architecture for

microprocessor/microcontroller compatible

write interface

32-Pin EPROM pinouts

— 32-pin PDIP

— 32-pin PLCC

■ On-chip address and data latches

— 32-pin TSOP

■ Advanced CMOS flash memory technology

— Low cost single transistor memory cell

■ Automatic write/erase pulse stop timer

■ 10,000 write/erase cycles minimum

■ Write and erase voltage 12.0 V ±5%

GENERAL DESCRIPTION

The Am28F256 is a 256 K Flash memory organized as

32 Kbytes of 8 bits each. AMD’s Flash memories offer

the most cost-effective and reliable read/write non-

volatile random access memory. The Am28F256 is

packaged in 32-pin PDIP, PLCC, and TSOP versions. It

is designed to be reprogrammed and erased in-system

or in standard EPROM programmers. The Am28F256

is erased when shipped from the factory.

The AMD cell is designed to optimize the erase and

programming mechanisms. In addition, the combina-

tion of advanced tunnel oxide processing and low

internal electric fields for erase and programming

operations produces reliable cycling. The Am28F256

uses a 12.0V±5% V

high voltage input to perform

the Flasherase and Flashrite algorithms.

The highest degree of latch-up protection is achieved

with AMD’s proprietary non-epi process. Latch-up

protection is provided for stresses up to 100 milliamps

The standard Am28F256 offers access times as fast as

70 ns, allowing operation of high-speed microproces-

sors without wait states. To eliminate bus contention,

on address and data pins from –1 V to V

+1 V.

the Am28F256 has separate chip enable (CE ) and

The Am28F256 is byte programmable using 10 µs

programming pulses in accordance with AMD’s

Flashrite programming algorithm. The typical room

temperature programming time of the Am28F256 is a

half a second. The entire chip is bulk erased using

10 ms erase pulses according to AMD’s Flasherase

alrogithm. Typical erasure at room temperature is

accomplished in less than one second. The windowed

package and the 15-20 minutes required for EPROM

erasure using ultra-violet light are eliminated.

output enable (OE ) controls.

AMD’s Flash memories augment EPROM functionality

with in-circuit electrical erasure and programming. The

Am28F256 uses a command register to manage this

functionality, while maintaining a standard JEDEC

Flash Standard 32-pin pinout. The command register

allows for 100% TTL level control inputs and fixed

power supply levels during erase and programming.

AMD’s Flash technology reliably stores memory

contents even after 10,000 erase and program cycles.

Publication# 11560 Rev: G Amendment/+2

Issue Date: January 1998

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中文翻译

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与AM28F256-120EIB相关器件

型号	品牌	获取价格	描述	数据表
AM28F256-120FC	AMD	获取价格	256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F256-120FCB	AMD	获取价格	256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F256-120FE	AMD	获取价格	256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F256-120FEB	AMD	获取价格	256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F256-120FI	AMD	获取价格	256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F256-120FIB	AMD	获取价格	256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F256-120JC	AMD	获取价格	256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F256-120JCB	AMD	获取价格	256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F256-120JE	AMD	获取价格	256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F256-120JEB	AMD	获取价格	256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory

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