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AM28F020-150JC PDF预览

AM28F020-150JC

更新时间： 2024-11-09 22:34:35
品牌 Logo 应用领域
超微 - AMD 闪存内存集成电路
页数 文件大小 规格书
35页 483K
描述
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory

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中文翻译

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AM28F020-150JC 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：QFJ包装说明：QCCJ, LDCC32,.5X.6
针数：32Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8542.32.00.51
风险等级：5.38Is Samacsys：N
最长访问时间：150 ns其他特性：10K WRITE/ERASE CYCLES MIN
命令用户界面：YES数据轮询：NO
耐久性：10000 Write/Erase CyclesJESD-30 代码：R-PQCC-J32
JESD-609代码：e0内存密度：2097152 bit
内存集成电路类型：FLASH内存宽度：8
功能数量：1端子数量：32
字数：262144 words字数代码：256000
工作模式：ASYNCHRONOUS最高工作温度：70 °C
最低工作温度：组织：256KX8
输出特性：3-STATE封装主体材料：PLASTIC/EPOXY
封装代码：QCCJ封装等效代码：LDCC32,.5X.6
封装形状：RECTANGULAR封装形式：CHIP CARRIER
并行/串行：PARALLEL峰值回流温度（摄氏度）：NOT SPECIFIED
电源：5 V编程电压：12 V
认证状态：Not Qualified最大待机电流：0.0001 A
子类别：Flash Memories最大压摆率：0.03 mA
最大供电电压 (Vsup)：5.5 V最小供电电压 (Vsup)：4.5 V
标称供电电压 (Vsup)：5 V表面贴装：YES
技术：CMOS温度等级：COMMERCIAL
端子面层：Tin/Lead (Sn/Pb)端子形式：J BEND
端子节距：1.27 mm端子位置：QUAD
处于峰值回流温度下的最长时间：NOT SPECIFIED切换位：NO
类型：NOR TYPEBase Number Matches：1

AM28F020-150JC 数据手册

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FINAL  
Am28F020  
2 Megabit (256 K x 8-Bit)  
CMOS 12.0 Volt, Bulk Erase Flash Memory  
■
Latch-up protected to 100 mA from  
–1 V to VCC +1 V  
DISTINCTIVE CHARACTERISTICS  
■
High performance  
■
■
Flasherase Electrical Bulk Chip Erase  
— One second typical chip erase time  
Flashrite Programming  
— Access times as fast as 70 ns  
CMOS low power consumption  
— 30 mA maximum active current  
— 100 µA maximum standby current  
— No data retention power consumption  
■
— 10 µs typical byte program time  
— 4 s typical chip program time  
■
Command register architecture for  
microprocessor/microcontroller compatible  
write interface  
■
Compatible with JEDEC-standard byte-wide  
32-pin EPROM pinouts  
— 32-pin PDIP  
■
■
On-chip address and data latches  
— 32-pin PLCC  
Advanced CMOS flash memory technology  
— Low cost single transistor memory cell  
Automatic write/erase pulse stop timer  
— 32-pin TSOP  
■
■
10,000 write/erase cycles minimum  
■
±
Write and erase voltage 12.0 V 5%  
GENERAL DESCRIPTION  
The Am28F020 is a 2 Megabit Flash memory orga-  
nized as 256 Kbytes of 8 bits each. AMD’s Flash mem-  
ories offer the most cost-effective and reliable read/  
write non-volatile random access memory. The  
Am28F020 is packaged in 32-pin PDIP, PLCC, and  
TSOP versions. It is designed to be reprogrammed and  
erased in-system or in standard EPROM programmers.  
The Am28F020 is erased when shipped from  
the factory.  
gramming mechanisms. In addition, the combination of  
advanced tunnel oxide processing and low internal  
electric fields for erase and programming operations  
produces reliable cycling. The Am28F020 uses a  
12.0±5% VPP supply input to perform the Flasherase  
and Flashrite functions.  
The highest degree of latch-up protection is achieved  
with AMD’s proprietary non-epi process. Latch-up pro-  
tection is provided for stresses up to 100 mA on  
address and data pins from –1 V to VCC +1 V.  
The standard Am28F020 offers access times of as fast  
as 70 ns, allowing high speed microprocessors to  
operate without wait states. To eliminate bus conten-  
tion, the device has separate chip enable (CE#) and  
output enable (OE#) controls.  
The Am28F020 is byte programmable using 10 µs  
programming pulses in accordance with AMD’s  
Flashrite programming algorithm. The typical room  
temperature programming time of the Am28F020 is  
four seconds. The entire chip is bulk erased using 10  
ms erase pulses according to AMD’s Flasherase  
algorithm. Typical erasure at room temperature is  
accomplished in less than one second. The windowed  
package and the 15–20 minutes required for EPROM  
erasure using ultraviolet light are eliminated.  
AMD’s Flash memories augment EPROM functionality  
with in-circuit electrical erasure and programming. The  
Am28F020 uses a command register to manage this  
functionality, while maintaining a JEDEC-standard 32-  
pin pinout. The command register allows for 100% TTL  
level control inputs and fixed power supply levels during  
erase and programming, while maintaining maximum  
EPROM compatibility.  
Commands are written to the command register using  
standard microprocessor write timings. Register con-  
tents serve as input to an internal state-machine, which  
controls the erase and programming circuitry. During  
write cycles, the command register internally latches  
AMD’s Flash technology reliably stores memory con-  
tents even after 10,000 erase and program cycles. The  
AMD cell is designed to optimize the erase and pro-  
Publication# 14727 Rev: F Amendment/+2  
Issue Date: January 1998  
1234567...35

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AM28F020-150JC 替代型号

型号 品牌 替代类型 描述 数据表
AM28F020-150JI AMD

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