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AM2317AE3SR PDF预览

AM2317AE3SR

更新时间: 2024-10-31 01:14:35
品牌 Logo 应用领域
创瑞 - AITSEMI /
页数 文件大小 规格书
8页 436K
描述
P-CHANNEL ENHANCEMENT MODE POWER MOSFET

AM2317AE3SR 数据手册

 浏览型号AM2317AE3SR的Datasheet PDF文件第2页浏览型号AM2317AE3SR的Datasheet PDF文件第3页浏览型号AM2317AE3SR的Datasheet PDF文件第4页浏览型号AM2317AE3SR的Datasheet PDF文件第5页浏览型号AM2317AE3SR的Datasheet PDF文件第6页浏览型号AM2317AE3SR的Datasheet PDF文件第7页 
AM2317A  
AiT Semiconductor Inc.  
MOSFET  
www.ait-ic.com  
P-CHANNEL ENHANCEMENT MODE POWER MOSFET  
DESCRIPTION  
FEATURES  
AM2317A is the P-Channel enhancement mode  
power field effect transistors are using trench  
DMOS technology. This advanced trench  
technology devices are well suited for high  
efficiency fast switching applications, low in-line  
power loss are needed in small outline surface  
mount package.  
VDS = -20V, ID = -4.2A  
R
R
R
R
DS(ON)=38mΩ(Typ.)@VGS=-10V  
DS(ON)=45mΩ(Typ.)@VGS=-4.5V  
DS(ON)=60mΩ(Typ.)@VGS=-2.5V  
DS(ON)=80mΩ(Typ.)@VGS=-1.8V  
Fast switch  
1.8V Low gate drive applications  
High power and current handling capability  
Available in SOT-23S Package  
The AM2317A is available in SOT-23S package.  
APPLICATIONS  
Hand-Held Instruments  
Load Switch  
TYPICAL APPLICATION  
ORDERING INFORMATION  
Package Type  
Part Number  
AM2317AE3SR  
AM2317AE3SVR  
SOT-23S  
E3S  
SPQ: 3,000pcs/Reel  
V: Halogen free Package  
R: Tape & Reel  
Note  
AiT provides all RoHS products  
REV1.0  
- JUL 2018 RELEASED -  
- 1 -  

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