Datasheet > AM2317P

AM2317P

更新时间： 2024-09-15 07:16:55

品牌	Logo	应用领域
ANALOGPOWER		/
页数	文件大小	规格书
6页	238K
描述
P - Channel Logic Level MOSFET

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AM2317P 数据手册

Analog Power

AM2317P

P - Channel Logic Level MOSFET

These miniature surface mount MOSFETs

utilize a high cell density trench process to

provide low r_DS(on)and to ensure minimal

power loss and heat dissipation. Typical

applications are DC-DC converters and

power management in portable and

battery-powered products such as

PRODUCT SUMMARY

V_DS(V)

r_DS(on)(Ω)

I_D(A)

-1.0

0.30 @ V_GS= -10 V

0.50 @ V_GS= -4.5V

-30

-0.9

computers, printers, PCMCIA cards,

cellular and cordless telephones.

•

Low r_DS(on)provides higher efficiency and

extends battery life

Low thermal impedance copper leadframe

SOT-23 saves board space

•

Fast switching speed

High performance trench technology

ABSOLUTE MAXIMUM RATINGS (T_A= 25 ^oC UNLESS OTHERWISE NOTED)

Parameter Symbol Maximum Units

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

-30

T_A=25^oC

T_A=70^oC

0.9

0.75

Continuous Drain Current^a

I_D

Pulsed Drain Current^b

I_DM

I_S

Continuous Source Current (Diode Conduction)^a

Power Dissipation^a

0.4

T_A=25^oC

T_A=70^oC

0.5

P_D

0.42

^oC

Operating Junction and Storage Temperature Range

T_J, T_stg-55 to 150

THERMAL RESISTANCE RATINGS

Parameter

Symbol Maximum Units

t <= 5 sec

Steady-State

250

Maximum Junction-to-Ambient^a

^oC/W

R_THJA

285

Notes

Surface Mounted on 1” x 1” FR4 Board.

Pulse width limited by maximum junction temperature

Publication Order Number:

DS-AM2317_C

PRELIMINARY

12 3 4 5 6

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