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AM2319P PDF预览

AM2319P

更新时间: 2024-09-15 12:52:15
品牌 Logo 应用领域
ANALOGPOWER /
页数 文件大小 规格书
6页 292K
描述
P - Channel Logic Level MOSFET

AM2319P 数据手册

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Analog Power  
AM2319P  
P - Channel Logic Level MOSFET  
These miniature surface mount MOSFETs  
utilize High Cell Density process. Low  
rDS(on) assures minimal power loss and  
conserves energy, making this device ideal  
for use in power management circuitry.  
Typical applications are voltage control  
small signal switch, power management in  
portable and battery-powered products  
such as computer portable electronics and  
other battery power application.  
PRODUCT SUMMARY  
VDS (V)  
rDS(on) ()  
ID (A)  
0.20 @ VGS = -10 V  
0.30 @ VGS = -4.5V  
-2.1  
-1.7  
-30  
G
S
Low rDS(on) Provides Higher Efficiency and  
Extends Battery Life  
D
Fast Switch  
Low Gate Charge  
Miniature SOT-23 Surface Mount Package  
Saves Board Space  
o
ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED)  
Parameter Symbol Maximum Units  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
VGS  
-30  
V
±20  
TA=25oC  
TA=70oC  
-2.1  
-1.7  
±10  
-0.4  
1.25  
0.8  
Continuous Drain Currenta  
ID  
A
Pulsed Drain Currentb  
Continuous Source Current (Diode Conduction)a  
Power Dissipationa  
IDM  
IS  
A
TA=25oC  
TA=70oC  
PD  
W
oC  
Operating Junction and Storage Temperature Range  
TJ, Tstg -55 to 150  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol Maximum Units  
250  
285  
t <= 5 sec  
Steady-State  
Maximum Junction-to-Ambienta  
oC/W  
RTHJA  
Notes  
a.  
b.  
Surface Mounted on 1” x 1” FR4 Board.  
Pulse width limited by maximum junction temperature  
1
Publication Order Number:  
DS-AM2319_H  
July, 2003 - Rev. A  
PRELIMINARY  

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