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ALD1123EPCL

更新时间： 2024-02-18 07:16:45
品牌 Logo 应用领域
先进线性 - ALD /
页数 文件大小 规格书
14页 148K
描述
QUAD/DUAL EPAD® PRECISION N-CHANNEL MATCHED PAIR MOSFET ARRAY

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中文翻译

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ALD1123EPCL 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Contact Manufacturer包装说明：,
Reach Compliance Code：unknown风险等级：5.68
Base Number Matches：1

ALD1123EPCL 数据手册

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TM  
A
L
D
DVANCED  
INEAR  
EVICES, INC.  
®
e
EPAD  
A
ALD1121E/ALD1123E  
QUAD/DUAL EPAD® PRECISION N-CHANNEL MATCHED PAIR MOSFET ARRAY  
GENERAL DESCRIPTION  
BENEFITS  
®
ALD1121E/ALD1123E are monolithic quad/dual EPAD (Electrically  
• Precision matched electrically after  
packaging  
Programmable Analog Device) N-channel MOSFETs with electrically  
adjustable threshold (turn-on) voltage. The ALD1121E/ALD1123E are  
precision matched and adjusted (e-trimmed) at the factory resulting in  
quad/dual MOSFETs that are highly matched in electrical characteristics.  
• Simple, elegant single-chip user option  
to trim voltage/current values  
• Excellent device matching characteristics  
with or without additional electrical trim  
The ALD1123E has four (4) separate source pins. S , S  
share a  
common substrate pin, V- , which has to be connected to the most  
N1 N2  
• Remotely and electrically trim parameters  
1
on circuits that are physically inaccessible  
negative voltage potential. Likewise, S , S share a common substrate  
N3 N4  
pin, V- , which has to be connected to the negative voltage potential for  
2
S
, S . The ALD1121E has two (2) separate source pins (S , S ).  
N3 N4  
Both S , S  
N1 N2  
PIN CONFIGURATION  
share a common substrate, pin 4, which has to be  
N2  
N1  
connectedtothemostnegativevoltagepotential. Foragiveninputvoltage,  
the threshold voltage of a MOSFET device determines its drain on-current,  
resulting in an on-resistance characteristic that can be precisely preset and  
then controlled by the input voltage very accurately.  
ALD1121E  
P
S
D
8
7
N1  
1
2
N2  
M 1  
G
N1  
N2  
Using an ALD1121E/ALD1123E is simple and straight forward. The  
MOSFETs function as n-channel MOSFETs, except that all the devices  
have exceptional matching to each other in electrical characteristics. For  
a given input voltage,thethresholdvoltageofaMOSFETdevicedetermines  
itsdrainon-current, resultinginan on-resistancecharacteristicthatcanbe  
precisely preset and then controlled by the input voltage very accurately.  
Since these devices are on the same monolithic chip, they also exhibit  
excellent tempco matching characteristics.  
D
G
P
N1  
6
5
N2  
3
4
M 2  
-
S
V
N1,  
N2  
TOP VIEW  
SAL, PAL, DA PACKAGES  
ALD1123E  
M 1  
M 2  
ORDERING INFORMATION (“L” suffix denotes lead-free (RoHS))  
1
2
3
4
5
6
7
8
P
G
D
S
16  
15  
14  
13  
12  
11  
10  
9
S
N1  
N1  
N1  
N2  
Operating Temperature Range*  
D
N2  
0°C to +70°C  
0°C to +70°C  
-55°C to +125°C  
G
P
N2  
-
V
8-Pin SOIC  
Package  
8-Pin Plastic Dip  
Package  
8-Pin CERDIP  
Package  
N2  
1, N1  
S
P
N4  
N3  
D
N3  
G
ALD1121ESAL  
ALD1121EPAL  
ALD1121EDA  
N4  
N4  
D
S
G
P
N3  
16-Pin SOIC  
Package  
16-Pin Plastic Dip  
Package  
16-Pin CERDIP  
Package  
-
V
N3  
2, N4  
M 4  
M 3  
ALD1123ESCL  
ALD1123EPCL  
ALD1123EDC  
TOP VIEW  
SCL, PCL, DC PACKAGES  
* Contact factory for leaded (non-RoHS) or high temperature versions.  
BLOCK DIAGRAM  
BLOCK DIAGRAM  
ALD1121E  
ALD1123E  
P
(13)  
D
N3  
(11)  
P
(1)  
D
N1  
(3)  
P
(9)  
D
N4  
(7)  
P
(5)  
N4  
D
N2  
(15)  
N2  
N1  
N3  
N4  
D
(7)  
P
N2  
(5)  
P
(1)  
D
(3)  
N1  
N2  
N1  
G
(2)  
N1  
G
(10)  
N3  
G
(6)  
G
(14)  
N2  
G
(6)  
G (2)  
N1  
N2  
~
M 2  
M 3  
M 4  
M 1  
~
~
M 1  
M 2  
-
S (4)  
N1  
S
N1  
(4)  
-
S
N2  
(16)  
S
N3  
(12)  
V
(4)  
S
(8)  
N2  
-
S (8)  
N4  
V
(4)  
V
(8)  
1
2
Rev 2.0 ©2012 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, CA 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286  
www.aldinc.com  
1234567...14

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