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ADuM4121-1ARIZ PDF预览

ADuM4121-1ARIZ

更新时间: 2024-02-19 13:59:21
品牌 Logo 应用领域
亚德诺 - ADI 驱动双极性晶体管光电二极管接口集成电路驱动器
页数 文件大小 规格书
16页 529K
描述
2 A peak output current (<2 Ω RDSON)

ADuM4121-1ARIZ 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Active包装说明:SOP,
针数:8Reach Compliance Code:compliant
风险等级:2.19高边驱动器:YES
接口集成电路类型:BUFFER OR INVERTER BASED IGBT/MOSFET DRIVERJESD-30 代码:R-PDSO-G8
JESD-609代码:e3长度:7.5 mm
湿度敏感等级:3功能数量:1
端子数量:8最高工作温度:125 °C
最低工作温度:-40 °C标称输出峰值电流:2.3 A
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260座面最大高度:2.65 mm
最大供电电压:6.5 V最小供电电压:2.5 V
标称供电电压:5 V电源电压1-最大:35 V
电源电压1-分钟:4.5 V电源电压1-Nom:15 V
表面贴装:YES技术:CMOS
温度等级:AUTOMOTIVE端子面层:Tin (Sn)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
断开时间:0.053 µs接通时间:0.042 µs
宽度:5.85 mmBase Number Matches:1

ADuM4121-1ARIZ 数据手册

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ADuM4121/ADuM4121-1  
Data Sheet  
Parameter  
Symbol  
tPSK  
tPSKHL  
tPSKLH  
tPWD  
Min  
Typ  
Max  
22  
12  
15  
13  
Unit  
ns  
ns  
ns  
ns  
Test Conditions/Comments  
Skew3  
CL = 2 nF, VDD2 = 15 V, RGON = RGOFF = 5 Ω  
CL = 2 nF, VDD2 = 15 V, RGON = RGOFF = 5 Ω  
CL = 2 nF, VDD2 = 15 V, RGON = RGOFF = 5 Ω  
CL = 2 nF, VDD2 = 15 V, RGON = RGOFF = 5 Ω  
CL = 2 nF, VDD2 = 15 V, RGON = RGOFF = 5 Ω  
Falling Edge4  
Rising Edge5  
Pulse Width Distortion  
Output Rise/Fall Time (10% to 90%)  
Common-Mode Transient Immunity (CMTI)  
Static CMTI6  
7
18  
tR/tF  
|CM|  
11  
26  
ns  
150  
150  
kV/µs VCM = 1500 V  
kV/µs VCM = 1500 V  
Dynamic CMTI7  
1 RGON and RGOFF are the external gate resistors in the test.  
2 tDLH propagation delay is measured from the time of the input rising logic high threshold, VIH, to the output rising 10% threshold of the VOUT signal. tDHL propagation  
delay is measured from the input falling logic low threshold, VIL, to the output falling 90% threshold of the VOx signal. See Figure 24 for waveforms of the propagation delay  
parameters.  
3 tPSK is the magnitude of the worst case difference in tDLH and/or tDHL that is measured between units at the same operating temperature, supply voltages, and output  
load within the recommended operating conditions. See Figure 24 for waveforms of the propagation delay parameters.  
4 tPSKHL is the magnitude of the worst case difference in tDHL that is measured between units at the same operating temperature, supply voltages, and output load within  
the recommended operating conditions. See Figure 24 for waveforms of the propagation delay parameters.  
5 tPSKLH is the magnitude of the worst case difference in tDLH that is measured between units at the same operating temperature, supply voltages, and output load within  
the recommended operating conditions. See Figure 24 for waveforms of the propagation delay parameters.  
6 Static common-mode transient immunity (CMTI) is defined as the largest dv/dt between GND1 and GND2, with inputs held either high or low, such that the output  
voltage remains either above 0.8 × VDD2 for output high or 0.8 V for output low. Operation with transients above recommended levels can cause momentary data upsets.  
7 Dynamic common-mode transient immunity (CMTI) is defined as the largest dv/dt between GND1 and GND2 with the switching edge coincident with the transient test  
pulse. Operation with transients above the recommended levels can cause momentary data upsets.  
REGULATORY INFORMATION  
The ADuM4121/ADuM4121-1 are pending approval by the organizations listed in Table 2.  
Table 2.  
UL (Pending)  
CSA (Pending)  
VDE (Pending)  
CQC (Pending)  
UL1577 Component  
Recognition Program  
Approved under CSA Component Acceptance  
Notice 5A  
DIN V VDE V 0884-10  
(VDE V 0884-10):2006-12  
Certified under CQC11-  
471543-2012  
Single Protection, 5000 V rms  
Isolation Voltage  
CSA 60950-1-07+A1+A2 and IEC 60950-1, second  
edition, +A1+A2:  
Reinforced insulation, 849 V  
peak, VIOSM = 10 kV peak  
GB4943.1-2011  
Basic insulation at 800 V rms (1131 V peak)  
Basic insulation 849 V peak,  
VIOSM = 16 kV peak  
Basic insulation at 800 V rms  
(1131 V peak)  
Reinforced insulation at 400 V rms (565 V peak)  
IEC 60601-1 Edition 3.1:  
Reinforced insulation at  
400 V rms (565 V peak)  
Basic insulation (1 MOPP), 500 V rms (707 V peak)  
Reinforced insulation (2 MOPP), 250 V rms  
(1414 V peak)  
CSA 61010-1-12 and IEC 61010-1 third edition  
Basic insulation at: 600 V rms mains, 800 V  
secondary (1089 V peak)  
Reinforced insulation at: 300 V rms mains, 400 V  
secondary (565 V peak)  
File E214100  
File 205078  
File 2471900-4880-0001  
File (pending)  
PACKAGE CHARACTERISTICS  
Table 3.  
Parameter  
Symbol  
RI-O  
CI-O  
Min  
Typ  
1012  
2.0  
Max  
Unit  
Ω
pF  
Test Conditions/Comments  
Resistance (Input Side to High-Side Output)1  
Capacitance (Input Side to High-Side Output)1  
Input Capacitance  
CI  
4.0  
pF  
Junction to Top Characterization Parameter  
ΨJT  
7.3  
°C/W  
4-layer PCB  
1 The device is considered a two-terminal device: Pin 1 through Pin 4 are shorted together, and Pin 5 through Pin 8 are shorted together.  
Rev. 0| Page 4 of 16  
 
 
 
 
 

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