Data Sheet
ADuM4135
Single-/Dual-Supply, High Voltage Isolated IGBT Gate Driver with Miller Clamp
► PV inverters
► Motor drives
► Power supplies
► Automotive
FEATURES
► 13 A short-circuit source current (0 Ω gate resistance)
► 14 A short-circuit sink current (0 Ω gate resistance)
► 4.61 A peak current (2 Ω gate resistance)
► Output power device resistance: <1 Ω
► Desaturation protection
GENERAL DESCRIPTION
The ADuM4135 is a single-channel gate driver specifically opti-
mized for driving insulated gate bipolar transistors (IGBTs). Analog
Devices, Inc., iCoupler technology provides isolation between the
► Isolated desaturation fault reporting
► Soft shutdown on fault
®
► Miller clamp output with gate sense input
► Isolated fault and ready functions
► Low propagation delay: 55 ns typical
► Minimum pulse width: 50 ns
► Operating temperature range: −40°C to +125°C
► Output voltage range to 30 V
► Input voltage range from 2.5 V to 6 V
► Output and input undervoltage lockout (UVLO)
► Creepage distance: 7.8 mm minimum
► 100 kV/µs common-mode transient immunity (CMTI)
► 20-year lifetime for 600 V rms or 1092 V dc working voltage
► Safety and regulatory approvals
► 5 kV ac for 1 minute per UL 1577
► CSA Component Acceptance Notice 5A
► DIN VDE V 0884-11:2017-01
input signal and the output gate drive.
The ADuM4135 includes a Miller clamp to provide robust IGBT
turn-off with a single-rail supply when the gate voltage drops below
2 V (typical). Operation with unipolar or bipolar secondary supplies
is possible, with or without the Miller clamp operation.
The Analog Devices chip scale transformers also provide isolated
communication of control information between the high voltage and
low voltage domains of the chip. Information on the status of the
chip can be read back from dedicated outputs. Control of resetting
the device after a fault on the secondary is performed on the
primary side of the device.
Integrated onto the ADuM4135 is a desaturation detection circuit
that provides protection against high voltage short-circuit IGBT
operation. The desaturation protection contains noise reducing fea-
tures such as a 370 ns (typical) masking time after a switching
event to mask voltage spikes due to initial turn-on. An internal
537 µA (typical) current source allows low device count and the
internal blanking switch allows the addition of an external current
source if more noise immunity is needed.
► VIORM = 849 V peak (reinforced)
► Qualified for automotive applications
APPLICATIONS
The secondary UVLO is set to 11.67 V (typical) with common IGBT
threshold levels taken into consideration.
► MOSFET/IGBT gate drivers
FUNCTIONAL BLOCK DIAGRAM
Figure 1.
Rev. E
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