Datasheet > ADUM4146

ADUM4146

更新时间： 2023-12-20 18:46:30

品牌	Logo	应用领域
亚德诺 - ADI		栅极驱动高压驱动器
页数	文件大小	规格书
17页	1032K
描述
提供故障检测、米勒钳位的11 A高压隔离双极性栅极驱动器

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ADUM4146 数据手册

Data Sheet

ADuM4146

11 A High Voltage Isolated Bipolar Gate Driver with Fault Detection, Miller Clamp

FEATURES

GENERAL DESCRIPTION

► 11 A short-circuit source current (0 Ω gate resistance)

► 9 A short-circuit sink current (0 Ω gate resistance)

► 4.61 A peak current (2 Ω gate resistance)

► Output power device resistance: <1 Ω

► Output voltage range up to 30 V

► Multiple UVLO options on V_DD2

► Grade A: 14.5 V (typical) UVLO on V_DD2positive going thresh-

old

► Grade B and Grade C: 11.5 V (typical) UVLO on V_DD2positive

going threshold

► V_DD1input voltage range from 2.5 V to 6 V

► Desaturation protection

► Soft shutdown on desaturation fault

► Multiple desaturation detect comparator voltages

► Grade B: 9.2 V (typical)

The ADuM4146 is a single-channel gate driver specifically opti-

mized for driving silicon carbide (SiC), metal-oxide semiconductor

field effect transistors (MOSFETs). Analog Devices, Inc., iCoupler^®

technology provides isolation between the input signal and the

output gate drive.

The ADuM4146 includes a Miller clamp to provide robust SiC turn

off with a single-rail supply when the gate voltage drops to less

than 2 V. Operation with unipolar or bipolar secondary supplies is

possible with or without the Miller clamp operation.

The Analog Devices chip scale transformers also provide isolated

communication of control information between the high voltage and

low voltage domains of the chip. Information on the status of the

chip can be read back from dedicated outputs. Control of resetting

the device after a fault on the secondary side is performed on the

primary side of the device.

Integrated onto the ADuM4146 is a desaturation detection circuit

that provides protection against high voltage short-circuit SiC oper-

ation. The desaturation protection contains noise reducing features,

such as a 300 ns masking time after a switching event to mask

voltage spikes due to initial turn on (see Figure 17). An optional

internal 500 µA current source allows low device count, and the

internal blanking switch allows the addition of an external current

source if more noise immunity is needed.

► Grade A and Grade C: 3.5 V (typical)

► Miller clamp output with gate sense input

► Isolated fault and ready functions

► Low propagation delay: 75 ns (typical)

► Operating temperature range: −40°C to +125°C

► Creepage distance: 8.3 mm minimum

► CMTI: 100 kV/µs

The secondary undervoltage lockout (UVLO) is set to 14.5 V (typi-

cal) for Grade A and is set to 11.5 V (typical) for Grade B and

Grade C with common SiC and insulated gate bipolar transistor

(IGBT) levels taken into consideration.

► Safety and regulatory approvals (pending)

► 5000 V rms for 1 minute per UL 1577

► CSA Component Acceptance Notice 5A

► DIN V VDE V 0884-11

► V_IORM= 2150 V peak

APPLICATIONS

► SiC/MOSFET/IGBT gate drivers

► Photovoltaic (PV) inverters

► Motor drives

► Power supplies

Rev. 0

Information furnished by Analog Devices is believed to be accurate and reliable "as is". However, no responsibility is assumed by Analog

Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to

change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and

registered trademarks are the property of their respective owners.

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