High Voltage, Isolated Gate Driver with
Internal Miller Clamp, 2 A Output
Data Sheet
ADuM4121/ADuM4121-1
FEATURES
GENERAL DESCRIPTION
2 A peak output current (<2 Ω RDSON
2.5 V to 6.5 V input
4.5 V to 35 V output
Undervoltage lockout (UVLO) at 2.5 V VDD1
Multiple UVLO options on VDD2
Grade A: 4.4 V (typical) UVLO on VDD2
Grade B: 7.3 V (typical) UVLO on VDD2
Grade C: 11.3 V (typical) UVLO on VDD2
Precise timing characteristics
53 ns maximum isolator and driver propagation delay
CMOS input logic levels
High common-mode transient immunity: >150 kV/µs
High junction temperature operation: 125°C
Default low output
)
The ADuM4121/ADuM4121-11 are 2 A isolated, single-channel
drivers that employ Analog Devices, Inc.’s iCoupler® technology
to provide precision isolation. The ADuM4121/ADuM4121-1
provide 5 kV rms isolation in the wide-body, 8-lead SOIC package.
Combining high speed CMOS and monolithic transformer
technology, these isolation components provide outstanding
performance characteristics superior to alternatives such as the
combination of pulse transformers and gate drivers.
The ADuM4121/ADuM4121-1 operate with an input supply
ranging from 2.5 V to 6.5 V, providing compatibility with lower
voltage systems. In comparison to gate drivers that employ high
voltage level translation methodologies, the ADuM4121/
ADuM4121-1 offer the benefit of true, galvanic isolation
between the input and the output.
Internal Miller clamp
The ADuM4121/ADuM4121-1 include an internal Miller clamp
that activates at 2 V on the falling edge of the gate drive output,
supplying the driven gate with a lower impedance path to reduce
the chance of Miller capacitance induced turn on.
Safety and regulatory approvals (pending)
UL recognition per UL 1577
5 kV rms for 1-minute withstand
CSA Component Acceptance Notice 5A
VDE certificate of conformity (pending)
DIN V VDE V 0884-10 (VDE V 0884-10): 2006-12
Options exists to allow the thermal shutdown to be enabled or
disabled. As a result, the ADuM4121/ADuM4121-1 provide
reliable control over the switching characteristics of insulated
gate bipolar transistor (IGBT)/metal oxide semiconductor field,
effect transistor (MOSFET) configurations over a wide range of
switching voltages.
V
IORM = 849 V peak
Wide-body, 8-lead SOIC
APPLICATIONS
Switching power supplies
Isolated IGBT/MOSFET gate drives
Industrial inverters
Gallium nitride (GaN)/silicon carbide (SiC) power devices
FUNCTIONAL BLOCK DIAGRAM
UVLO
TSD
ADuM4121/
1
2
8
7
V
V
V
DD1
DD2
ADuM4121-1
DECODE
AND
ENCODE
V +
I
OUT
LOGIC
V –
I
3
4
6
5
CLAMP
2V
GND
GND
2
1
UVLO
Figure 1.
1 Protected by U.S. Patents 5,952,849; 6,873,065; 7,075,239. Other patents pending.
Rev. 0
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