Datasheet > ADRF5020

ADRF5020

更新时间： 2024-11-25 01:23:11

品牌	Logo	应用领域
亚德诺 - ADI		/
页数	文件大小	规格书
12页	341K
描述
Microwave radios and very small aperture terminals

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数据手册

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ADRF5020 数据手册

100 MHz to 30 GHz,

Silicon SPDT Switch

ADRF5020

Data Sheet

FEATURES

FUNCTIONAL BLOCK DIAGRAM

RF2

Ultrawideband frequency range: 100 MHz to 30 GHz

Nonreflective 50 Ω design

ADRF5020

VSS

Low insertion loss: 2.0 dB to 30 GHz

High isolation: 60 dB to 30 GHz

50Ω

RFC

High input linearity

CTRL

1 dB power compression (P1dB): 28 dBm typical

Third-order intercept (IP3): 52 dBm typical

High power handling

50Ω

VDD

RF1

24 dBm through path

24 dBm terminated path

Figure 1.

ESD sensitivity: Class 1, 1 kV human body model (HBM)

20-terminal, 3 mm × 3 mm, land grid array package

No low frequency spurious

Radio frequency (RF) settling time (to 0.1 dB of final RF

output): 15 ns

APPLICATIONS

Test instrumentation

Microwave radios and very small aperture terminals (VSATs)

Military radios, radars, electronic counter measures (ECMs)

Broadband telecommunications systems

GENERAL DESCRIPTION

The ADRF5020 is a general-purpose, single-pole, double-throw

(SPDT) switch manufactured using a silicon process. It comes

in a 3 mm × 3 mm, 20-terminal land grid array (LGA) package

and provides high isolation and low insertion loss from 100 MHz

to 30 GHz.

This broadband switch requires dual supply voltages, +3.3 V

and −2.5 V, and provides CMOS/LVTTL logic-compatible

control.

Rev. A

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responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other

rightsof third parties that may result fromits use. Specifications subject to change without notice. No

license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

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Technical Support

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