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ADRF5025 PDF预览

ADRF5025

更新时间: 2024-02-29 00:28:04
品牌 Logo 应用领域
亚德诺 - ADI 光电二极管
页数 文件大小 规格书
13页 446K
描述
Silicon SPDT Switch, Reflective, 9 kHz to 44 GHz

ADRF5025 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Active包装说明:LCC12,.1SQ,16
针数:12Reach Compliance Code:compliant
风险等级:2.171dB压缩点:27 dBm
特性阻抗:50 Ω构造:COMPONENT
最大输入功率 (CW):27.5 dBm安装特点:SURFACE MOUNT
功能数量:1端子数量:12
准时:1.7 µs最大工作频率:44000 MHz
最小工作频率:0.009 MHz最高工作温度:105 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装等效代码:LCC12,.1SQ,16端口终止:REFLECTIVE
电源:+-3.3 V射频/微波设备类型:DIVERSITY SWITCH
表面贴装:YES技术:CMOS
Base Number Matches:1

ADRF5025 数据手册

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Silicon SPDT Switch, Reflective,  
9 kHz to 44 GHz  
Data Sheet  
ADRF5025  
FEATURES  
FUNCTIONAL BLOCK DIAGRAM  
Ultrawideband frequency range: 9 kHz to 44 GHz  
Reflective design  
Low insertion loss with impedance match  
0.9 dB typical to 18 GHz  
ADRF5025  
VSS  
1.4 dB typical to 40 GHz  
1.6 dB typical to 44 GHz  
Low insertion loss without impedance match  
0.9 dB typical to 18 GHz  
RFC  
CTRL  
VDD  
1.7 dB typical to 40 GHz  
2.2 dB typical to 44 GHz  
High input linearity  
P1dB: 27.5 dBm typical  
IP3: 50 dBm typical  
Figure 1.  
High RF input power handling  
Through path: 27 dBm  
Hot switching: 27 dBm  
No low frequency spurious  
RF settling time (50% VCTL to 0.1 dB final RF output): 3.4 µs  
12-terminal, 2.25 mm × 2.25 mm LGA package  
Pin compatible with the ADRF5024 fast switching version  
APPLICATIONS  
Industrial scanners  
Test and instrumentation  
Cellular infrastructure: 5G mmWave  
Military radios, radars, electronic counter measures (ECMs)  
Microwave radios and very small aperture terminals (VSATs)  
GENERAL DESCRIPTION  
The ADRF5025 is a reflective single-pole double-throw (SPDT)  
switch, manufactured in silicon process.  
The ADRF5025 is pin compatible with the ADRF5024, low  
frequency cutoff version, which operates from 100 MHz to  
44 GHz.  
This switch operates from 9 kHz to 44 GHz with better than  
1.6 dB of insertion loss and 35 dB of isolation. The ADRF5025  
has an radio frequency (RF) input power handling capability of  
27 dBm for both the through path and hot switching.  
The ADRF5025 RF ports are designed to match a characteristic  
impedance of 50 Ω. For ultrawideband products, impedance  
matching on the RF transmission lines can further optimize high  
frequency insertion loss and return loss characteristics. Refer to  
the Electrical Specifications section, Typical Performance  
Characteristics section, and Applications Information section  
for more details.  
The ADRF5025 draws a low current of 14 µA on the positive  
supply of +3.3 V and 120 µA on negative supply of −3.3 V. The  
device employs complementary metal-oxide semiconductor  
(CMOS)-/low voltage transistor to transistor logic (LVTTL)-  
compatible controls.  
The ADRF5025 comes in a 2.25 mm × 2.25 mm, 12-terminal,  
RoHS-compliant, land grid array (LGA) package and can  
operate from −40°C to +105°C.  
Rev. B  
Document Feedback  
Information furnished by Analog Devices is believed to be accurate and reliable. However, no  
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other  
rights of third parties that may result from its use. Specifications subject to change without notice.  
No license is granted by implication or otherwise under any patent or patent rights of Analog  
Devices. Trademarks and registeredtrademarks are the property of their respective owners.  
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.  
Tel: 781.329.4700 ©2018–2020 Analog Devices, Inc. All rights reserved.  
Technical Support  
www.analog.com  
 
 
 
 

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