Data Sheet
ADRF5032
1 GHz to 60 GHz, Reflective, Silicon SPDT Switch
FEATURES
FUNCTIONAL BLOCK DIAGRAM
► Ultra-wideband frequency range: 1 GHz to 60 GHz
► Low insertion loss
► 1.3 dB typical up to 40 GHz
► 1.9 dB typical up to 55 GHz
► 2.0 dB typical up to 60 GHz
► High isolation
► 43 dB typical up to 40 GHz
► 37 dB typical up to 55 GHz
► 32 dB typical up to 60 GHz
► High input linearity
► P0.1dB: 24 dBm typical
► IP3: 45 dBm typical
► High RF power handling
► Through path: 24 dBm
Figure 1. Functional Block Diagram
► Hot switching path: 21 dBm
► CMOS/LVTTL compatible
► No low-frequency spur
► Fast RF switching time: 15 ns
► RF settling time (50% VCTRL to 0.1 dB of RF output): 35 ns
► Single-supply operation capability (VDD = 3.3 V, VSS = 0 V)
► 12-terminal, 2.5 mm × 2.5 mm, RoHS-compliant, LGA package
GENERAL DESCRIPTION
The ADRF5032 is a reflective, single-pole double-throw (SPDT)
switch manufactured using the silicon process. The ADRF5032
operates from 1 GHz to 60 GHz with insertion loss of lower than
2.0 dB and isolation of higher than 32 dB. The device has an RF
input power handling capability of 24 dBm for both through paths
and 21 dBm for hot switching. The ADRF5032 requires dual-supply
voltages of ±3.3 V. The ADRF5032 employs CMOS and low-voltage
transistor to transistor logic (LVTTL)-compatible control.
APPLICATIONS
The ADRF5032 can also operate with a single positive supply volt-
age (VDD) applied while the negative supply voltage (VSS) is tied to
ground. In this operating condition, the small signal performance is
maintained while the switching characteristics, linearity, and power
handling performance are derated. See Table 2 for more details.
► Industrial scanners
► Test and instrumentation
► Cellular infrastructure: 5G mmWave
► Military radios, radars, electronic counter measures (ECMs)
► Microwave radios and very small aperture terminals (VSATs)
The ADRF5032 is packaged in a 12-terminal, 2.5 mm × 2.5 mm,
RoHS-compliant, land grid array (LGA). The ADRF5032 operates
from −40°C to +105°C.
Rev. A
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