Datasheet > ADRF5032

ADRF5032

更新时间： 2024-11-25 14:58:03

品牌	Logo	应用领域
亚德诺 - ADI		开关光电二极管
页数	文件大小	规格书
11页	657K
描述
1 GHz至60 GHz硅SPDT反射式开关

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ADRF5032 数据手册

Data Sheet

ADRF5032

1 GHz to 60 GHz, Reflective, Silicon SPDT Switch

FEATURES

FUNCTIONAL BLOCK DIAGRAM

► Ultra-wideband frequency range: 1 GHz to 60 GHz

► Low insertion loss

► 1.3 dB typical up to 40 GHz

► 1.9 dB typical up to 55 GHz

► 2.0 dB typical up to 60 GHz

► High isolation

► 43 dB typical up to 40 GHz

► 37 dB typical up to 55 GHz

► 32 dB typical up to 60 GHz

► High input linearity

► P0.1dB: 24 dBm typical

► IP3: 45 dBm typical

► High RF power handling

► Through path: 24 dBm

Figure 1. Functional Block Diagram

► Hot switching path: 21 dBm

► CMOS/LVTTL compatible

► No low-frequency spur

► Fast RF switching time: 15 ns

► RF settling time (50% V_CTRLto 0.1 dB of RF output): 35 ns

► Single-supply operation capability (V_DD= 3.3 V, V_SS= 0 V)

► 12-terminal, 2.5 mm × 2.5 mm, RoHS-compliant, LGA package

GENERAL DESCRIPTION

The ADRF5032 is a reflective, single-pole double-throw (SPDT)

switch manufactured using the silicon process. The ADRF5032

operates from 1 GHz to 60 GHz with insertion loss of lower than

2.0 dB and isolation of higher than 32 dB. The device has an RF

input power handling capability of 24 dBm for both through paths

and 21 dBm for hot switching. The ADRF5032 requires dual-supply

voltages of ±3.3 V. The ADRF5032 employs CMOS and low-voltage

transistor to transistor logic (LVTTL)-compatible control.

APPLICATIONS

The ADRF5032 can also operate with a single positive supply volt-

age (V_DD) applied while the negative supply voltage (V_SS) is tied to

ground. In this operating condition, the small signal performance is

maintained while the switching characteristics, linearity, and power

handling performance are derated. See Table 2 for more details.

► Industrial scanners

► Test and instrumentation

► Cellular infrastructure: 5G mmWave

► Military radios, radars, electronic counter measures (ECMs)

► Microwave radios and very small aperture terminals (VSATs)

The ADRF5032 is packaged in a 12-terminal, 2.5 mm × 2.5 mm,

RoHS-compliant, land grid array (LGA). The ADRF5032 operates

from −40°C to +105°C.

Rev. A

Information furnished by Analog Devices is believed to be accurate and reliable "as is". However, no responsibility is assumed by Analog

Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to

change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and

registered trademarks are the property of their respective owners.

DOCUMENT FEEDBACK

TECHNICAL SUPPORT

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与ADRF5032相关器件

型号	品牌	获取价格	描述	数据表
ADRF5040	ADI	获取价格	High power handling
ADRF5040BCPZ	ADI	获取价格	High Isolation, Silicon SP4T, Nonreflective Switch, 9 kHz to 12.0 GHz
ADRF5040BCPZ-R7	ADI	获取价格	High Isolation, Silicon SP4T, Nonreflective Switch, 9 kHz to 12.0 GHz
ADRF5040-EVALZ	ADI	获取价格	High power handling
ADRF5042	ADI	获取价格	Nonreflective, 100 MHz to 44 GHz Silicon SP4T Switch
ADRF5042BCCZN	ADI	获取价格	Nonreflective, 100 MHz to 44 GHz Silicon SP4T Switch
ADRF5042BCCZN-R7	ADI	获取价格	Nonreflective, 100 MHz to 44 GHz Silicon SP4T Switch
ADRF5042-EVALZ	ADI	获取价格	Nonreflective, 100 MHz to 44 GHz Silicon SP4T Switch
ADRF5043	ADI	获取价格	Nonreflective, 9 kHz to 44 GHz Silicon SP4T Switch
ADRF5043BCCZN	ADI	获取价格	Nonreflective, 9 kHz to 44 GHz Silicon SP4T Switch

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