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ADP3419JRM-REEL PDF预览

ADP3419JRM-REEL

更新时间: 2024-02-16 13:33:05
品牌 Logo 应用领域
安森美 - ONSEMI 驱动器接口集成电路光电二极管
页数 文件大小 规格书
13页 181K
描述
Dual Bootstrapped, High Voltage MOSFET Driver with Output Disable

ADP3419JRM-REEL 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:MSOP
包装说明:LEAD FREE, MSOP-10针数:10
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.46
高边驱动器:YES接口集成电路类型:HALF BRIDGE BASED MOSFET DRIVER
JESD-30 代码:S-PDSO-G10JESD-609代码:e3
长度:3 mm湿度敏感等级:1
功能数量:1端子数量:10
最高工作温度:100 °C最低工作温度:
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装等效代码:TSSOP10,.19,20封装形状:SQUARE
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH峰值回流温度(摄氏度):260
电源:5 V认证状态:Not Qualified
座面最大高度:1.1 mm子类别:MOSFET Drivers
标称供电电压:5 V电源电压1-最大:26 V
电源电压1-分钟:4 V表面贴装:YES
温度等级:OTHER端子面层:Matte Tin (Sn)
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:40
宽度:3 mm

ADP3419JRM-REEL 数据手册

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ADP3419  
THEORY OF OPERATION  
The ADP3419 is a dual MOSFET driver optimized for driving  
two N-channel MOSFETs in a synchronous buck converter  
topology. A single PWM input signal is all that is required to  
properly drive the high-side and the low-side MOSFETs. Each  
driver is capable of driving a 3 nF load at speeds up to 1 MHz. A  
more detailed description of the ADP3419 and its features  
follows. Refer to the detailed block diagram in Figure 17.  
HIGH-SIDE DRIVER  
The high-side driver is designed to drive a floating low RDS(ON)  
N-channel MOSFET. The bias voltage for the high-side driver is  
developed by an external bootstrap supply circuit, which is  
connected between the BST and SW pins.  
The bootstrap circuit comprises a diode, D1, and bootstrap  
capacitor, CBST. When the ADP3419 is starting up, the SW pin is  
at ground, so the bootstrap capacitor charges up to VCC  
through D1. Once the supply voltage ramps up and exceeds the  
UVLO threshold, the driver is enabled. When IN goes high, the  
high-side driver begins to turn on the high-side MOSFET (Q1)  
by transferring charge from CBST. As Q1 turns on, the SW pin  
rises up to VDCIN, forcing the BST pin to VDCIN + VC(BST), which is  
enough gate-to-source voltage to hold Q1 on. To complete the  
cycle, Q1 is switched off by pulling the gate down to the voltage  
at the SW pin. When the low-side MOSFET (Q2) turns on, the  
SW pin is pulled to ground. This allows the bootstrap capacitor  
to charge up to VCC again.  
5V  
V
DCIN  
D1  
VCC  
5
ADP3419  
UVLO  
AND BIAS  
4
1
CROWBAR  
IN  
BST  
10  
9
R
BST  
C
+
BST  
DRVH  
SW  
Q1  
OVERLAP  
PROTECTION  
AND  
2
SD  
8
6
TIME-OUT  
CIRCUIT  
When the driver is enabled, the drivers output is in phase with  
the IN pin. Table 4 shows the relationship between DRVH and  
the different control inputs of the ADP3419.  
VCC  
DRVL  
Q2  
3
DRVLSD  
7
OVERLAP PROTECTION CIRCUIT  
GND  
The overlap protection circuit prevents both main power  
switches, Q1 and Q2, from being on at the same time. This is  
done to prevent shoot-through currents from flowing through  
both power switches and the associated losses that can occur  
during their on-off transitions. The overlap protection circuit  
accomplishes this by adaptively controlling the delay from Q1s  
turn-off to Q2s turn-on, and the delay from Q2’s turn-off to  
Q1s turn-on.  
To prevent the overlap of the gate drives during Q1’s turn-off  
and Q2s turn-on, the overlap circuit monitors the voltage at the  
SW pin and DRVH pin. When IN goes low, Q1 begins to turn  
off. The overlap protection circuit waits for the voltage at the  
SW and DRVH pins to both fall below 1.6 V. Once both of these  
conditions are met, Q2 begins to turn on. Using this method,  
the overlap protection circuit ensures that Q1 is off before Q2  
turns on, regardless of variations in temperature, supply voltage,  
gate charge, and drive current. There is, however, a timeout  
circuit that overrides the waiting period for the SW and DRVH  
pins to reach 1.6 V. After the timeout period has expired, DRVL  
is asserted high regardless of the SW and DRVH voltages. In the  
opposite case, when IN goes high, Q2 begins to turn off after a  
propagation delay. The overlap protection circuit waits for the  
voltage at DRVL to fall below 1.6 V, after which DRVH is  
asserted high and Q1 turns on.  
Figure 17. Detailed Block Diagram of the ADP3419  
UNDERVOLTAGE LOCKOUT  
The undervoltage lockout (UVLO) circuit holds both MOSFET  
driver outputs low during VCC supply ramp-up. The UVLO  
logic becomes active and in control of the driver outputs at a  
supply voltage of no greater than 1.5 V. The UVLO circuit waits  
until the VCC supply has reached a voltage high enough to bias  
logic level MOSFETs fully on before releasing control of the  
drivers to the control pins.  
DRIVER CONTROL INPUT  
The driver control input (IN) is connected to the duty ratio  
modulation signal of a switch-mode controller. IN can be  
driven by 2.5 V to 5.0 V logic. The output MOSFETs are driven  
so that the SW node follows the polarity of IN.  
LOW-SIDE DRIVER  
The low-side driver is designed to drive a ground-referenced  
low RDS(ON) N-channel synchronous rectifier MOSFET. The bias  
to the low-side driver is internally connected to the VCC supply  
and GND. Once the supply voltage ramps up and exceeds the  
UVLO threshold, the driver is enabled. When the driver is  
enabled, the drivers output is 180° out of phase with the IN pin.  
Table 4 shows the relationship between DRVL and the different  
control inputs of the ADP3419.  
Rev. 2 | Page 9 of 13 | www.onsemi.com  

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