Datasheet > ADP165ACPZN-2.3-R7

ADP165ACPZN-2.3-R7

更新时间： 2024-10-28 21:01:23

品牌	Logo	应用领域
亚德诺 - ADI		光电二极管输出元件调节器
页数	文件大小	规格书
23页	620K
描述
Very Low Quiescent Current, 150 mA, with Output Discharge LDO Regulator

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Data Sheet

ADP165/ADP166

ultraviolet (NUV, 200 nm to 400 nm) bands; therefore, they can

penetrate more deeply into the active silicon.

LIGHT SENSITIVITY OF WLCSPs

The WLCSP package option is essentially a silicon die with

additional post fabrication dielectric and metal processing

designed to contact solder bumps on the active side of the chip.

With this package type, the die is exposed to ambient light and

is subject to photoelectric effects. Light sensitivity analysis of

a WLCSP mounted on standard PCB material reveals that

performance may be impacted when the package is illuminated

directly by high intensity light. No degradation in electrical

performance is observed due to illumination by low intensity

(0.1 mW/cm²) ambient light. Direct sunlight can have intensities of

50 mW/cm², and office ambient light can be as low as 0.1 mW/cm².

Incident light with wavelengths greater than 1100 nm has

no photoelectric effect on silicon devices because silicon is

transparent to wavelengths in this range.

The spectral content of conventional light sources varies

considerably. Sunlight has a broad spectral range, with peak

intensity in the visible band that falls off in the NUV and NIR

bands; fluorescent lamps have significant peaks in the visible

but not the NUV or NIR bands. Tungsten lighting has a broad

peak in the longer visible wavelengths with a significant tail in

the NIR.

When the WLCSP is assembled on the board with the bump

side of the die facing the PCB, reflected light from the PCB

surface is incident on active silicon circuit areas and results in

the increased leakage currents. No performance degradation occurs

due to illumination of the backside (substrate) of the WLCSP.

Efforts have been made at a product level to reduce the effect of

ambient light; the under bump metal (UBM) has been designed

to shield the sensitive circuit areas on the active side (bump side) of

the die. However, if an application encounters any light sensitivity

with the WLCSP, shielding the bump side of the WLCSP package

with opaque material eliminates this effect. Shielding can be

accomplished using materials such as silica-filled liquid epoxies

like those used in flip-chip underfill techniques.

All WLCSPs are particularly sensitive to incident light with

wavelengths in the near infrared range (NIR, 700 nm to 1000 nm).

Photons in this waveband have a longer wavelength and lower

energy than photons in the visible (400 nm to 700 nm) and near

Rev. A | Page 21 of 23

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与ADP165ACPZN-2.3-R7相关器件

型号	品牌	获取价格	描述	数据表
ADP165ACPZN-3.0-R7	ADI	获取价格	Very Low Quiescent Current, 150 mA, with Output Discharge LDO Regulator
ADP165ACPZN-3.3-R7	ADI	获取价格	Very Low Quiescent Current, 150 mA, with Output Discharge LDO Regulator
ADP165ACPZN-R7	ADI	获取价格	Very Low Quiescent Current, 150 mA, with Output Discharge LDO Regulator
ADP165AUJZ-1.2-R7	ADI	获取价格	Very Low Quiescent Current, 150 mA, with Output Discharge LDO Regulator
ADP165AUJZ-2.3-R7	ADI	获取价格	Very Low Quiescent Current, 150 mA, with Output Discharge LDO Regulator
ADP165AUJZ-3.0-R7	ADI	获取价格	Very Low Quiescent Current, 150 mA, with Output Discharge LDO Regulator
ADP165AUJZ-3.3-R7	ADI	获取价格	Very Low Quiescent Current, 150 mA, with Output Discharge LDO Regulator
ADP165AUJZ-R7	ADI	获取价格	Very Low Quiescent Current, 150 mA, with Output Discharge LDO Regulator
ADP166	ADI	获取价格	150 mA 超低静态电流LDO调节器
ADP1660	ADI	获取价格	Dual 750 mA LED Flash Driver with I2C-Compatible Interface

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