High IP3,
10 MHz to 6 GHz, Active Mixer
ADL5801
FEATURES
FUNCTIONAL BLOCK DIAGRAM
VPLO GND NC IFON IFOP GND
Broadband upconverter/downconverter
Power conversion gain of 1.8 dB
Broadband RF, LO, and IF ports
SSB noise figure (NF) of 9.75 dB
Input IP3: 28.5 dBm
Input P1dB: 13.3 dBm
Typical LO drive: 0 dBm
Single-supply operation: 5 V at 130 mA
Adjustable bias for low power operation
Exposed paddle, 4 mm × 4 mm, 24-lead LFCSP package
24
23
22
21
20
19
1
2
3
4
18
17
16
15
GND
GND
LOIP
LOIN
VPRF
GND
RFIP
RFIN
ADL5801
V2I
GND
GND
5
6
14 GND
13 VPDT
DET
APPLICATIONS
7
8
9
10
11
12
Cellular base station receivers
Radio link downconverters
Broadband block conversion
Instrumentation
VPLO GND ENBL VSET DETO GND
Figure 1.
GENERAL DESCRIPTION
The ADL5801 uses a high linearity, doubly balanced, active
mixer core with integrated LO buffer amplifier to provide high
dynamic range frequency conversion from 10 MHz to 6 GHz.
The mixer benefits from a proprietary linearization architecture
that provides enhanced input IP3 performance when subject to
high input levels. A bias adjust feature allows the input linearity,
SSB noise figure, and dc current to be optimized using a single
control pin. An optional input power detector is provided for
adaptive bias control. The high input linearity allows the device
to be used in demanding cellular applications where in-band
blocking signals may otherwise result in degradation in
dynamic performance. The adaptive bias feature allows the part
to provide high input IP3 performance when presented with
large blocking signals. When blockers are removed, the
ADL5801 can automatically bias down to provide low noise
figure and low power consumption.
The balanced active mixer arrangement provides superb LO-to-
RF and LO-to-IF leakage, typically better than −40 dBm. The IF
outputs are designed to provide a typical voltage conversion
gain of 7.8 dB when loaded into a 200 Ω load. The broad
frequency range of the open-collector IF outputs allows the
ADL5801 to be applied as an upconverter for various transmit
applications.
The ADL5801 is fabricated using a SiGe high performance IC
process. The device is available in a compact 4 mm × 4 mm,
24-lead LFCSP package and operates over a −40°C to +85°C
temperature range. An evaluation board is also available.
Rev. 0
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