Datasheet > ADG1401BRMZ-REEL7

ADG1401BRMZ-REEL7

更新时间： 2024-02-19 11:18:20

品牌	Logo	应用领域
亚德诺 - ADI		开关
页数	文件大小	规格书
16页	442K
描述
1 Ω On Resistance, ±15 V/+12 V/±5 V iCMOS SPST Switches

阅读下载

中文翻译

获取价格

技术参数
数据手册
替代型号

如果您发现信息不准确，欢迎纠错

ADG1401BRMZ-REEL7 技术参数

是否无铅：	含铅	是否Rohs认证：	符合
生命周期：	Active	零件包装代码：	MSOP
包装说明：	TSSOP, TSSOP8,.19	针数：	8
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8542.39.00.01	风险等级：	1.57
模拟集成电路 - 其他类型：	SPST	JESD-30 代码：	S-PDSO-G8
JESD-609代码：	e3	长度：	3 mm
湿度敏感等级：	1	负电源电压最大值（Vsup）：	-16.5 V
负电源电压最小值（Vsup）：	-4.5 V	标称负供电电压 (Vsup)：	-5 V
正常位置：	NO	信道数量：	1
功能数量：	1	端子数量：	8
标称断态隔离度：	58 dB	最大通态电阻 (Ron)：	2.7 Ω
最高工作温度：	125 °C	最低工作温度：	-40 °C
封装主体材料：	PLASTIC/EPOXY	封装代码：	TSSOP
封装等效代码：	TSSOP8,.19	封装形状：	SQUARE
封装形式：	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	峰值回流温度（摄氏度）：	260
电源：	+-5/+12/+-15 V	认证状态：	Not Qualified
座面最大高度：	1.1 mm	子类别：	Multiplexer or Switches
最大供电电压 (Vsup)：	16.5 V	最小供电电压 (Vsup)：	4.5 V
标称供电电压 (Vsup)：	5 V	表面贴装：	YES
最长接通时间：	375 ns	切换：	BREAK-BEFORE-MAKE
技术：	CMOS	温度等级：	AUTOMOTIVE
端子面层：	Matte Tin (Sn)	端子形式：	GULL WING
端子节距：	0.65 mm	端子位置：	DUAL
处于峰值回流温度下的最长时间：	30	宽度：	3 mm

ADG1401BRMZ-REEL7 数据手册

浏览型号ADG1401BRMZ-REEL7的Datasheet PDF文件第2页

浏览型号ADG1401BRMZ-REEL7的Datasheet PDF文件第3页

浏览型号ADG1401BRMZ-REEL7的Datasheet PDF文件第4页

浏览型号ADG1401BRMZ-REEL7的Datasheet PDF文件第5页

浏览型号ADG1401BRMZ-REEL7的Datasheet PDF文件第6页

浏览型号ADG1401BRMZ-REEL7的Datasheet PDF文件第7页

1 Ω On Resistance, 1ꢀ ꢁV/1ꢂ ꢁV ꢀ ꢁ

iCMOS SPST Switches

ADG1401VADG140ꢂ

FUNCTIONAL BLOCK DIAGRAM

FEATURES

1 Ω on resistance

ADG1401

0.2 Ω on resistance flatness

Up to 430 mA continuous current

Fully specified at +12 V, 1ꢀ V, ꢀ V

No V_Lsupply required

3 V logic-compatible inputs

Rail-to-rail operation

8-lead MSOP and 8-lead, 3 mm × 2 mm LFCSP packages

SWITCHES SHOWN FOR A LOGIC 1 INPUT

Figure 1. ADG1401 Functional Block Diagram

APPLICATIONS

Automatic test equipment

Data acquisition systems

Battery-powered systems

Sample-and-hold systems

Audio signal routing

ADG1402

Video signal routing

Communication systems

Relay replacements

SWITCHES SHOWN FOR A LOGIC 1 INPUT

Figure 2. ADG1402 Functional Block Diagram

GENERAL DESCRIPTION

The on resistance profile is very flat over the full analog input

range ensuring excellent linearity and low distortion when

switching audio signals. The iCMOS construction ensures

ultralow power dissipation, making the part ideally suited for

portable and battery-powered instruments.

The ADG1401/ADG1402 contain a single-pole/single-throw

(SPST) switch. Figure 1 shows that with a logic input of 1, the

switch of the ADG1401 is closed and that of the ADG1402 is

open. Each switch conducts equally well in both directions when

on and has an input signal range that extends to the supplies. In

the off condition, signal levels up to the supplies are blocked.

PRODUCT HIGHLIGHTS

The iCMOS® (industrial CMOS) modular manufacturing process

combines high voltage, complementary metal-oxide semiconductor

(CMOS) and bipolar technologies. It enables the development

of a wide range of high performance analog ICs capable of 33 V

operation in a footprint that no other generation of high voltage

parts has achieved. Unlike analog ICs using conventional CMOS

processes, iCMOS components can tolerate high supply voltages

while providing increased performance, dramatically lower

power consumption, and a reduced package size.

1. 1.3 Ω maximum on resistance at 25°C.

2. Minimum distortion.

3. 3 V logic-compatible digital inputs: V_INH= 2.0 V, V_INL= 0.8 V.

4. No V_Llogic power supply required.

5. 8-lead MSOP and 8-lead, 3 mm × 2 mm LFCSP packages.

Rev. 0

Information furnished by Analog Devices is believed to be accurate and reliable. However, no

responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other

rights of third parties that may result from its use. Specifications subject to change without notice. No

license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

Trademarks and registeredtrademarks arethe property of their respective owners.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.

Tel: 781.329.4700

Fax: 781.461.3113

www.analog.com

12 3 4 5 6 7...16

中文翻译

下载PDF

ADG1401BRMZ-REEL7 替代型号

型号	品牌	替代类型	描述	数据表
ADG1401BRMZ	ADI	类似代替	1 Ω On Resistance, ±15 V/+12 V/±5 V iCMOS SPS

与ADG1401BRMZ-REEL7相关器件

型号	品牌	获取价格	描述	数据表
ADG1402	ADI	获取价格	1 Ω On Resistance, ±15 V/+12 V/±5 V iCMOS SPS
ADG1402BCPZ-REEL7	ADI	获取价格	1 Ω On Resistance, ±15 V/+12 V/±5 V iCMOS SPS
ADG1402BRMZ	ADI	获取价格	1 Ω On Resistance, ±15 V/+12 V/±5 V iCMOS SPS
ADG1402BRMZ-REEL7	ADI	获取价格	1 Ω On Resistance, ±15 V/+12 V/±5 V iCMOS SPS
ADG1404	ADI	获取价格	2з Max On Resistance, 【15 V/12 V/【5 V 4:1 iCM
ADG1404YCPZ-500RL7	ADI	获取价格	2з Max On Resistance, 【15 V/12 V/【5 V 4:1 iCM
ADG1404YCPZ-REEL	ADI	获取价格	暂无描述
ADG1404YCPZ-REEL7	ADI	获取价格	2з Max On Resistance, 【15 V/12 V/【5 V 4:1 iCM
ADG1404YRUZ	ADI	获取价格	2з Max On Resistance, 【15 V/12 V/【5 V 4:1 iCM
ADG1404YRUZ-REEL	ADI	获取价格	2з Max On Resistance, 【15 V/12 V/【5 V 4:1 iCM

与ADG1401BRMZ-REEL7相关文章

BSS138LT3G：一款高效能N沟道MOSFET的全面解析
2024-07-04

16
解读EGP10B二极管资料手册：产品特性、参数分析
2024-07-04

14
RT9164AGG手册资料详解：引脚信息、设计指南
2024-07-04

13
2SA1037KPT资料详解：产品特性、电气参数、设计指南
2024-07-04

16

产品中心

服务支持

精选活动

关于我们

帮助中心

ADG1401BRMZ-REEL7

ADG1401BRMZ-REEL7 技术参数

ADG1401BRMZ-REEL7 数据手册

ADG1401BRMZ-REEL7 替代型号

与ADG1401BRMZ-REEL7相关器件

与ADG1401BRMZ-REEL7相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

ADG1401BRMZ-REEL7

ADG1401BRMZ-REEL7 技术参数

ADG1401BRMZ-REEL7 数据手册

ADG1401BRMZ-REEL7 替代型号

与ADG1401BRMZ-REEL7相关器件

与ADG1401BRMZ-REEL7相关文章

您还可以找

您在本页遇到什么问题？