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ADG1408SRUZ-EP-RL7 PDF预览

ADG1408SRUZ-EP-RL7

更新时间: 2024-12-01 21:21:59
品牌 Logo 应用领域
亚德诺 - ADI 信息通信管理光电二极管
页数 文件大小 规格书
16页 411K
描述
4 Ω Ron, 8 - Channel ±15 V /12 V /±5 V iCMOS Multiplexer

ADG1408SRUZ-EP-RL7 数据手册

 浏览型号ADG1408SRUZ-EP-RL7的Datasheet PDF文件第2页浏览型号ADG1408SRUZ-EP-RL7的Datasheet PDF文件第3页浏览型号ADG1408SRUZ-EP-RL7的Datasheet PDF文件第4页浏览型号ADG1408SRUZ-EP-RL7的Datasheet PDF文件第5页浏览型号ADG1408SRUZ-EP-RL7的Datasheet PDF文件第6页浏览型号ADG1408SRUZ-EP-RL7的Datasheet PDF文件第7页 
4 Ω RON, 4-/8-Channel  
± ±1 ꢀ/ꢁ±ꢂ ꢀ/± 1 ꢀ iCMOS Multiplexers  
Enhanced Product  
ADG±408-EP/ADG±409-EP  
FEATURES  
FUNCTIONAL BLOCK DIAGRAM  
4.7 Ω maximum on resistance @ 25°C  
0.5 Ω on resistance flatness  
Up to 190 mA continuous current  
Fully specified at 15 V/+12 V/ 5 V  
3 V logic-compatible inputs  
Rail-to-rail operation  
ADG1408-EP  
ADG1409-EP  
S1  
S1A  
S4A  
DA  
DB  
D
S1B  
S4B  
Break-before-make switching action  
16-lead TSSOP  
S8  
ENHANCED PRODUCT FEATURES  
1-OF-8  
DECODER  
1-OF-4  
DECODER  
Supports defense and aerospace applications  
(AQEC standard)  
A0 A1 A2 EN  
A0 A1 EN  
Military temperature range: −55°C to +125°C  
Controlled manufacturing baseline  
One assembly and test site  
Figure 1.  
One fabrication site  
Enhanced product change notification  
Qualification data available on request  
GENERAL DESCRIPTION  
The ultralow on resistance and on resistance flatness of these  
switches make them ideal solutions for data acquisition and  
gain switching applications where low distortion is critical.  
iCMOS construction ensures ultralow power dissipation,  
making the parts ideally suited for portable and battery-  
powered instruments.  
The ADG1408-EP/ADG1409-EP are monolithic iCMOS® analog  
multiplexers comprising eight single channels and four  
differential channels, respectively. The ADG1408-EP switches  
one of eight inputs to a common output, as determined by the  
3-bit binary address lines, A0, A1, and A2. The ADG1409-EP  
switches one of four differential inputs to a common differential  
output, as determined by the 2-bit binary address lines, A0 and  
A1. An EN input on both devices is used to enable or disable  
the device. When disabled, all channels are switched off.  
Full details about this enhanced product are available in the  
ADG1408/ADG1409 data sheet, which should be consulted in  
conjunction with this data sheet.  
The iCMOS (industrial CMOS) modular manufacturing process  
combines high voltage CMOS (complementary metal-oxide  
semiconductor) and bipolar technologies. It enables the devel-  
opment of a wide range of high performance analog ICs capable  
of 33 V operation in a footprint that no other generation of high  
voltage parts has been able to achieve. Unlike analog ICs using  
conventional CMOS processes, iCMOS components can tolerate  
high supply voltages while providing increased performance,  
dramatically lower power consumption, and reduced package size.  
PRODUCT HIGHLIGHTS  
1. 4 Ω on resistance  
2. 0.5 Ω on resistance flatness  
3. 3 V logic-compatible digital input, VINH = 2.0 V, VINL = 0.8 V  
4. 16-lead TSSOP package  
Rev. B  
Document Feedback  
Information furnished by Analog Devices is believed to be accurate and reliable. However, no  
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other  
rights of third parties that may result from its use. Specifications subject to change without notice. No  
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.  
Trademarks and registeredtrademarks arethe property of their respective owners.  
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.  
Tel: 781.329.4700 ©2011–2017 Analog Devices, Inc. All rights reserved.  
Technical Support  
www.analog.com  
 
 
 
 
 

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