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ADB608 PDF预览

ADB608

更新时间: 2024-09-21 03:17:47
品牌 Logo 应用领域
DEC 二极管IOT局域网
页数 文件大小 规格书
2页 383K
描述
6 AMP SILICON BRIDGE RECTIFIERS

ADB608 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
包装说明:S-PUFM-W4Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.78Is Samacsys:N
其他特性:UL RECOGNIZED, HIGH RELIABILITY最小击穿电压:850 V
外壳连接:ISOLATED配置:BRIDGE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:BRIDGE RECTIFIER DIODE
最大正向电压 (VF):1.1 VJESD-30 代码:S-PUFM-W4
最大非重复峰值正向电流:250 A元件数量:4
相数:1端子数量:4
最高工作温度:125 °C最低工作温度:-55 °C
最大输出电流:3 A封装主体材料:PLASTIC/EPOXY
封装形状:SQUARE封装形式:FLANGE MOUNT
认证状态:Not Qualified最大重复峰值反向电压:800 V
最大反向电流:0.000005 µA子类别:Bridge Rectifier Diodes
表面贴装:NO技术:AVALANCHE
端子形式:WIRE端子位置:UPPER
Base Number Matches:1

ADB608 数据手册

 浏览型号ADB608的Datasheet PDF文件第2页 
DIOTEC ELECTRONICS CORP.  
18020 Hobart Blvd., Unit B  
Data Sheet No. BRDB-600-1D  
ABDB-600-1D  
Gardena, CA 90248 U.S.A  
Tel.: (310) 767-1052 Fax: (310) 767-7958  
6 AMP SILICON BRIDGE RECTIFIERS  
MECHANICAL SPECIFICATION  
FEATURES  
VOID FREE VACUUM DIE SOLDERING FOR MAXIMUM  
MECHANICAL STRENGTH AND HEAT DISSIPATION  
(Solder Voids: Typical < 2%, Max. < 10% of Die Area)  
ACTUAL SIZE  
DT  
SERIES DB600 - DB610 and ADB604 - ADB608  
DB602  
BUILT-IN STRESS RELIEF MECHANISM FOR  
SUPERIOR RELIABILITY AND PERFORMANCE  
BH  
SURGE OVERLOAD RATING TO 250 AMPS PEAK  
LL  
UL RECOGNIZED - FILE #E124962  
_
LD  
+
RoHS COMPLIANT  
D1  
MECHANICAL DATA  
MILLIMETERS  
INCHES  
+
Case: Molded Epoxy (UL Flammability Rating 94V-0)  
Terminals: Round silver plated copper pins  
SYM  
MIN  
14.7  
5.8  
MAX  
15.7  
6.9  
MIN  
0.58  
0.23  
MAX  
0.62  
0.27  
D1  
BL  
BL  
BH  
D1  
Soldering: Per MIL-STD 202 Method 208 guaranteed  
Polarity: Marked on side of case; positive lead at beveled corner  
Mounting Position: Any. Through hole provided for #6 screw  
Weight: 0.13 Ounces (3.6 Grams)  
_
10.3  
11.3  
0.405 0.445  
0.75 n/a  
0.039 0.042  
LL  
19.0  
n/a  
LD  
1.0  
1.1  
BL  
MAXIMUM RATINGS & ELECTRICAL CHARACTERISTICS  
RATINGS  
PARAMETER (TEST CONDITIONS)  
SYMBOL  
UNITS  
Series Number  
Maximum DC Blocking Voltage  
Working Peak Reverse Voltage  
Maximum Peak Recurrent Reverse Voltage  
V
V
VOLTS  
V
RMS Reverse Voltage  
V
Power Dissipation in V  
Region for 100 mS Square Wave  
Region  
P
WATTS  
Continuous Power Dissipation in V  
P
I t  
I
@ T =80 C (Heat Sink Temp)  
AMPS  
Thermal Energy (Rating for Fusing) t < 8.3mSec  
SEC  
Peak Forward Surge Current. Single 60Hz Half-Sine Wave  
Superimposed on Rated Load (JEDEC Method). Tc = 60 C  
AMPS  
I
T , T  
V
Average Forward Rectified Current, T = 60 C (Note 2)  
Junction Operating and Storage Temperature Range  
Minimum Avalanche Voltage  
°C  
See Note 5  
Maximum Avalanche Voltage  
V
VOLTS  
See Note 5  
Maximum Forward Voltage (Per Diode) at 6 Amps DC  
V
Typical Junction Capacitance (Note 4)  
C
pF  
@ T = 25 C  
@T = 125 C  
Maximum Reverse Current at Rated V  
I
mA  
V
VOLTS  
Minimum Insulation Breakdown Voltage (Circuit to Case)  
Typical Thermal Resistance, Junction to Case (Note 2)  
R
C/W  
E25  

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