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AD-BC858-B PDF预览

AD-BC858-B

更新时间: 2024-11-03 14:53:03
品牌 Logo 应用领域
江苏长电/长晶 - CJ /
页数 文件大小 规格书
6页 648K
描述
SOT-23

AD-BC858-B 数据手册

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www.jscj-elec.com  
AD-BC856/57/58 series  
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD.  
AD-BC856/57/58 Series Plastic-Encapsulated Transistor  
AD-BC856/57/58 series Transistor (PNP)  
FEATURES  
Ideally suited for automatic insertion  
For switching and AF amplifier applications  
AEC-Q101 qualified  
MARKING  
AD-BC856-A =3A; AD-BC856-B =3B  
AD-BC857-A =3E; AD-BC857-B =3F; AD-BC857-C =3G  
AD-BC858-A =3J; AD-BC858-B =3K; AD-BC858-C =3L  
The -A/B/C indicate the different hFE.  
MAXIMUM RATINGS (Tj = 25°C unless otherwise specified)  
Parameter  
Symbol  
Value  
-80  
Unit  
AD-BC856*  
AD-BC857*  
AD-BC858*  
AD-BC856*  
AD-BC857*  
AD-BC858*  
AD-BC846*  
AD-BC847*  
AD-BC848*  
Collector-base voltage  
VCBO  
-50  
V
-30  
-65  
Collector-emitter voltage  
Emitter-base voltage  
VCEO  
-45  
V
V
-30  
-5  
VEBO  
-5  
-5  
Collector continuous current  
Collector power dissipation  
IC  
PC  
-0.1  
200  
625  
-55 ~ 150  
A
mW  
°C/W  
°C  
Thermal resistance from junction to ambient  
RθJA  
Tj, Tstg  
Operating junction and storage temperature range  
Version 1.0  
1 / 6  
2021-07-01