Datasheet > A94

A94

更新时间： 2024-09-20 08:43:19

品牌	Logo	应用领域
金誉半导体 - HTSEMI		晶体晶体管
页数	文件大小	规格书
2页	426K
描述
TRANSISTOR (PNP)

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中文翻译

获取价格

数据手册

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A94 数据手册

A94

TRANSISTOR (PNP)

FEATURES

SOT-89-3L

High voltage

MAXIMUM RATINGS (T^a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Value

Units

1. BASE

-400

2. COLLECTOR

3. EMITTER

-400

-5

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

-0.2

P_C

0.5

℃

T_j

150

Storage Temperature

-55 to +150

T_stg

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

V_{(BR) CBO}

V_{(BR) CEO}

V_{(BR) EBO}

I_CBO

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C= -100μA, I_E=0

I_C= -1mA,I_B=0

-400

-5

I_E=-100μA,I_C=0

V_CB=-400V, I_E=0

-0.1

-5

μA

Collector cut-off current

I_CEO

V_CE=-400V, I_B=0

Emitter cut-off current

I_EBO

V_EB= -4V, I_C=0

-0.1

300

h_FE(1)

V_CE=-10V, I_C=-10mA

V_CE=-10V, I_C=-1mA

V_CE=-10V, I_C=-100mA

V_CE=-10V, I_C=-50mA

I_C=-10mA, I_B=-1mA

I_C=-50mA, I_B=-5mA

I_C=-10mA, I_B= -1mA

h_FE(2)

DC current gain

h_FE(3)

h_FE(4)

V_{CE (sat)}

V_{BE (sat)}

-0.2

-0.3

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

-0.75

_CE=-20V, I_C=-10mA

f_T

MHz

f =30MHz

JinYu

semiconductor

www.htsemi.com

Date:2011/05

中文翻译

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