Datasheet > A400CB12VF

A400CB12VF

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
超微 - AMD		闪存
页数	文件大小	规格书
44页	850K
描述
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory

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A400CB12VF 数据手册

D A T A S H E E T

LATCHUP CHARACTERISTICS

Description

Min

Max

Input voltage with respect to V_SSon all pins except I/O pins

(including A9, OE#, and RESET#)

–1.0 V

11.0 V

Input voltage with respect to V_SSon all I/O pins

–0.5 V

V_CC+ 0.5 V

+100 mA

_CCCurrent

–100 mA

Includes all pins except V_CC. Test conditions: V_CC= 1.8 V, one pin at a time.

TSOP PIN AND BGA PACKAGE CAPACITANCE

Parameter Symbol

Parameter Description

Test Setup

Typ

Max

7.5

5.0

Unit

TSOP

C_IN

Input Capacitance

V_IN= 0

V_OUT= 0

V_IN= 0

Fine-pitch BGA

TSOP

4.2

8.5

5.4

7.5

3.9

C_OUT

Output Capacitance

Fine-pitch BGA

TSOP

6.5

C_IN2

Control Pin Capacitance

Fine-pitch BGA

4.7

Notes:

1. Sampled, not 100% tested.

2. Test conditions T_A= 25°C, f = 1.0 MHz.

DATA RETENTION

Parameter

Test Conditions

Min

Unit

Years

150°C

125°C

Minimum Pattern Data Retention Time

January 23, 2007 Am29SL400C_00_A6

Am29SL400C

1...38 39 404142 43 44

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