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A400CB12VF PDF预览

A400CB12VF

更新时间: 2024-10-28 03:16:39
品牌 Logo 应用领域
超微 - AMD 闪存
页数 文件大小 规格书
44页 850K
描述
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory

A400CB12VF 数据手册

 浏览型号A400CB12VF的Datasheet PDF文件第38页浏览型号A400CB12VF的Datasheet PDF文件第39页浏览型号A400CB12VF的Datasheet PDF文件第40页浏览型号A400CB12VF的Datasheet PDF文件第42页浏览型号A400CB12VF的Datasheet PDF文件第43页浏览型号A400CB12VF的Datasheet PDF文件第44页 
D A T A S H E E T  
LATCHUP CHARACTERISTICS  
Description  
Min  
Max  
Input voltage with respect to VSS on all pins except I/O pins  
(including A9, OE#, and RESET#)  
–1.0 V  
11.0 V  
Input voltage with respect to VSS on all I/O pins  
–0.5 V  
VCC + 0.5 V  
+100 mA  
V
CC Current  
–100 mA  
Includes all pins except VCC. Test conditions: VCC = 1.8 V, one pin at a time.  
TSOP PIN AND BGA PACKAGE CAPACITANCE  
Parameter Symbol  
Parameter Description  
Test Setup  
Typ  
6
Max  
7.5  
5.0  
12  
Unit  
pF  
pF  
pF  
pF  
pF  
pF  
TSOP  
CIN  
Input Capacitance  
VIN = 0  
VOUT = 0  
VIN = 0  
Fine-pitch BGA  
TSOP  
4.2  
8.5  
5.4  
7.5  
3.9  
COUT  
Output Capacitance  
Fine-pitch BGA  
TSOP  
6.5  
9
CIN2  
Control Pin Capacitance  
Fine-pitch BGA  
4.7  
Notes:  
1. Sampled, not 100% tested.  
2. Test conditions TA = 25°C, f = 1.0 MHz.  
DATA RETENTION  
Parameter  
Test Conditions  
Min  
10  
Unit  
Years  
Years  
150°C  
125°C  
Minimum Pattern Data Retention Time  
20  
January 23, 2007 Am29SL400C_00_A6  
Am29SL400C  
39  

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