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A400CB12VF PDF预览

A400CB12VF

更新时间: 2024-10-28 03:16:39
品牌 Logo 应用领域
超微 - AMD 闪存
页数 文件大小 规格书
44页 850K
描述
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory

A400CB12VF 数据手册

 浏览型号A400CB12VF的Datasheet PDF文件第35页浏览型号A400CB12VF的Datasheet PDF文件第36页浏览型号A400CB12VF的Datasheet PDF文件第37页浏览型号A400CB12VF的Datasheet PDF文件第39页浏览型号A400CB12VF的Datasheet PDF文件第40页浏览型号A400CB12VF的Datasheet PDF文件第41页 
D A T A S H E E T  
AC CHARACTERISTICS  
Alternate CE# Controlled Erase/Program Operations  
Parameter  
Speed Options  
Description  
JEDEC  
tAVAV  
Std  
tWC  
tAS  
-100R  
-110  
-120  
-150  
Unit  
ns  
Write Cycle Time (Note 1)  
Address Setup Time  
Address Hold Time  
Data Setup Time  
Min  
Min  
Min  
Min  
Min  
Min  
100  
110  
120  
150  
tAVEL  
0
ns  
tELAX  
tDVEH  
tEHDX  
tAH  
50  
50  
55  
55  
60  
60  
70  
70  
ns  
tDS  
ns  
tDH  
tOES  
Data Hold Time  
0
0
ns  
Output Enable Setup Time  
ns  
Read Recovery Time Before Write  
(OE# High to WE# Low)  
tGHEL  
tGHEL  
Min  
0
ns  
tWLEL  
tEHWH  
tELEH  
tEHEL  
tWS  
tWH  
tCP  
WE# Setup Time  
WE# Hold Time  
Min  
Min  
Min  
Min  
Typ  
Typ  
Typ  
0
0
ns  
ns  
ns  
ns  
CE# Pulse Width  
CE# Pulse Width High  
50  
55  
60  
70  
tCPH  
30  
10  
12  
2
Byte  
Programming Operation  
(Notes 1, 2)  
tWHWH1  
tWHWH1  
µs  
Word  
tWHWH2  
Notes:  
tWHWH2 Sector Erase Operation (Notes 1, 2)  
sec  
1. Not 100% tested.  
2. See the Erase and Programming Performance‚ on page 38 sec-  
tion for more information.  
36  
Am29SL400C  
Am29SL400C_00_A6 January 23, 2007  

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