Datasheet > A400CB12VF

A400CB12VF

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
超微 - AMD		闪存
页数	文件大小	规格书
44页	850K
描述
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory

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A400CB12VF 数据手册

D A T A S H E E T

AC CHARACTERISTICS

Alternate CE# Controlled Erase/Program Operations

Parameter

Speed Options

Description

JEDEC

t_AVAV

Std

t_WC

t_AS

-100R

-110

-120

-150

Unit

Write Cycle Time (Note 1)

Address Setup Time

Address Hold Time

Data Setup Time

Min

100

110

120

150

t_AVEL

t_ELAX

t_DVEH

t_EHDX

t_AH

t_DS

t_DH

t_OES

Data Hold Time

Output Enable Setup Time

Read Recovery Time Before Write

(OE# High to WE# Low)

t_GHEL

Min

t_WLEL

t_EHWH

t_ELEH

t_EHEL

t_WS

t_WH

t_CP

WE# Setup Time

WE# Hold Time

Min

Typ

CE# Pulse Width

CE# Pulse Width High

t_CPH

Byte

Programming Operation

(Notes 1, 2)

t_WHWH1

µs

Word

t_WHWH2

Notes:

t_WHWH2Sector Erase Operation (Notes 1, 2)

sec

1. Not 100% tested.

2. See the Erase and Programming Performance‚ on page 38 sec-

tion for more information.

Am29SL400C

Am29SL400C_00_A6 January 23, 2007

1...35 36 373839 40 41...44

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