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A400CB12VF PDF预览

A400CB12VF

更新时间: 2022-04-23 23:00:11
品牌 Logo 应用领域
超微 - AMD 闪存
页数 文件大小 规格书
44页 850K
描述
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory

A400CB12VF 数据手册

 浏览型号A400CB12VF的Datasheet PDF文件第37页浏览型号A400CB12VF的Datasheet PDF文件第38页浏览型号A400CB12VF的Datasheet PDF文件第39页浏览型号A400CB12VF的Datasheet PDF文件第41页浏览型号A400CB12VF的Datasheet PDF文件第42页浏览型号A400CB12VF的Datasheet PDF文件第43页 
D A T A S H E E T  
ERASE AND PROGRAMMING PERFORMANCE  
Parameter  
Typ (Note 1)  
Max (Note 2)  
Unit  
s
Comments  
Sector Erase Time  
Chip Erase Time  
2
38  
10  
12  
5
15  
Excludes 00h programming prior to  
erasure (Note 4)  
s
Byte Programming Time  
Word Programming Time  
300  
360  
40  
µs  
µs  
s
Excludes system level overhead  
(Note 5)  
Byte Mode  
Word Mode  
Chip Programming Time  
(Note 3)  
3.5  
30  
s
Notes:  
1. Typical program and erase times assume the following conditions: 25°C, 2.0 V V , 1,000,000 cycles. Additionally, programming typicals assume  
CC  
checkerboard pattern.  
2. Under worst case conditions of 90°C, VCC = 1.8 V, 1,000,000 cycles.  
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes program faster than  
the maximum program times listed.  
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.  
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table 5 on page 18  
for further information on command definitions.  
6. The device has a minimum guaranteed erase and program cycle endurance of 1,000,000 cycles.  
38  
Am29SL400C  
Am29SL400C_00_A6 January 23, 2007  

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