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A28F010

更新时间： 2024-11-09 22:26:35
品牌 Logo 应用领域
英特尔 - INTEL /
页数 文件大小 规格书
23页 302K
描述
1024K (128K x 8) CMOS FLASH MEMORY

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A28F010 数据手册

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A28F010  
1024K (128K x 8) CMOS FLASH MEMORY  
(Automotive)  
Y
Y
Y
Y
Automotive Temperature Range:  
b
Integrated Program/Erase Stop Timer  
a
40 C to 125 C  
§
§
Flash Memory Electrical Chip-Erase  
Y
Y
Command Register Architecture for  
Microprocessor/Microcontroller  
Compatible Write Interface  
Ð 1 Second Typical Chip-Erase  
Quick-Pulse Programming Algorithm  
Ð 10 ms Typical Byte-Program  
Ð 2 Second Chip-Program  
Noise Immunity Features  
g
Ð Maximum Latch-Up Immunity  
Ð
10% V  
Tolerance  
CC  
through EPI Processing  
Y
1,000 Erase/Program Cycles Minimum  
over Automotive Temperature Range  
ETOXTM III Flash Nonvolatile Memory  
Technology  
Ð EPROM-Compatible Process Base  
Ð High-Volume Manufacturing  
Experience  
Y
Y
Y
Y
g
12.0V 5% V  
PP  
High-Performance Read  
Ð 120 ns Maximum Access Time  
Y
CMOS Low Power Consumption  
Ð 30 mA Maximum Active Current  
Ð 300 mA Maximum Standby Current  
JEDEC-Standard Pinouts  
Ð 32-Pin Plastic DIP  
Ð 32-Lead PLCC  
Ý
(See Packaging Spec., Order 231369)  
Intel’s 28F010 CMOS flash memory offers the most cost-effective and reliable alternative for read/write  
random access nonvolatile memory. The 28F010 adds electrical chip-erasure and reprogramming to familiar  
EPROM technology. Memory contents can be rewritten: in a test socket; in a PROM-programmer socket; on-  
board during subassembly test; in-system during final test; and in-system after-sale. The 28F010 increases  
memory flexibility, while contributing to time- and cost-savings.  
The 28F010 is a 1024-kilobit nonvolatile memory organized as 131,072 bytes of 8 bits. Intel’s 28F010 is  
offered in 32-pin Plastic DIP or 32-lead PLCC packages. Pin assignments conform to JEDEC standards.  
Extended erase and program cycling capability is designed into Intel’s ETOXTM III (EPROM Tunnel Oxide)  
process technology. Advanced oxide processing, an optimized tunneling structure, and lower electric field  
combine to extend reliable cycling beyond that of traditional EEPROMs. With the 12.0V V  
supply, the  
PP  
28F010 performs a minimum of 1,000 erase and program cycles well within the time limits of the Quick-Pulse  
Programming and Quick-Erase algorithms.  
Intel’s 28F010 employs advanced CMOS circuitry for systems requiring high-performance access speeds, low  
power consumption, and immunity to noise. Its 120 nanosecond access time provides no-WAIT-state perform-  
ance for a wide range of microprocessors and microcontrollers. Maximum standby current of 300 mA trans-  
lates into power savings when the device is deselected. Finally, the highest degree of latch-up protection is  
achieved through Intel’s unique EPI processing. Prevention of latch-up is provided for stresses up to 100 mA  
b
on address and data pins, from 1V to V  
a
1V.  
CC  
With Intel’s ETOX III process base, the 28F010 leverages years of EPROM experience to yield the highest  
levels of quality, reliability, and cost-effectiveness.  
In order to meet the rigorous environmental requirements of automotive applications, Intel offers the 28F010 in  
extended automotive temperature range. Read and write characteristics are guaranteed over the range of  
b
a
40 C to 125 C ambient.  
§
§
*Other brands and names are the property of their respective owners.  
Information in this document is provided in connection with Intel products. Intel assumes no liability whatsoever, including infringement of any patent or  
copyright, for sale and use of Intel products except as provided in Intel’s Terms and Conditions of Sale for such products. Intel retains the right to make  
changes to these specifications at any time, without notice. Microcomputer Products may have minor variations to this specification known as errata.  
©
COPYRIGHT INTEL CORPORATION, 1995  
November 1995  
Order Number: 290266-004  
1234567...23

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