Datasheet > A1776

A1776

更新时间： 2024-09-13 23:14:11

品牌	Logo	应用领域
罗姆 - ROHM		晶体开关晶体管
页数	文件大小	规格书
4页	250K
描述
High-voltage Switching Transistor (-400V, -0.5A)

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数据手册

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A1776 数据手册

2SA1812 / 2SA1727 / 2SA1776

Transistors

High-voltage Switching Transistor

( 400V, 0.5A)

2SA1812 / 2SA1727 / 2SA1776

Features

1) High breakdown voltage, BVCEO

= 400V.

2) Low saturation voltage, typically VCE (sat)

3) High switching speed, typically tf : 1 s at IC

4) Wide SOA (safe operating area).

0.3V at IC / IB

= 100mA.

100mA / 10mA.

Absolute maximum ratings (Ta=25°C)

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

VCBO

Limits

Unit

400

VCEO

400

VEBO

0.5

A (DC)

Collector current

1.0

A (Pulse)

0.5

2SA1812

Collector power

dissipation

2SA1727

2SA1776

W (Tc 25°C)

°C

Junction temperature

Storage temperature

150

Tstg

55 to +150

1 Single pulse 2 When mounted on a 40 40 0.7mm ceramic board.

3 When t 1.7mm and the foil collector area on the PC board is 1cm²or greater.

Packaging specifications and hFE

Type

2SA1812

2SA1727

2SA1776

Package

MPT3

CPT3

ATV

hFE

Marking

Code

T100

3000

TV2

Basic ordering unit (pieces)

3000

2500

Denotes hFE

Electrical characteristics (Ta

25°C)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

Symbol

Min.

Typ.

Max.

Unit

Conditions

BVCBO

BVCEO

BVEBO

ICBO

IEBO

400

50 A

1mA

50 A

VCB

VEB

VCE

IC/IB

VCB

VCE

400V

DC current tranfer ratio

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

hFE

150

270

5V , IC

50mA

VCE(sat)

VBE(sat)

100mA / 10mA

1.2

100mA / 10mA

0.6

2.7

MHz

5V , IE 50mA , f 5MHz

10V , IE 0A , f 1MHz

Output capacitance

Cob

ton

Turn-on time

IB1

100mA, RL 1.5k

Storage time

tstg

IB2

10mA

VCC to 150V

Fall time

Rev.A

1/3

12 3 4

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