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A150N50X4B

更新时间： 2024-10-28 04:02:43

品牌	Logo	应用领域
安伦 - ANAREN		射频和微波射频端接器微波端接器
页数	文件大小	规格书
2页	306K
描述
Chip Termination 150 Watts, 50W

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中文翻译

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技术参数
数据手册

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A150N50X4B 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.72	Is Samacsys：	N
特性阻抗：	50 Ω	构造：	COMPONENT
最大输入功率 (CW)：	51.76 dBm	JESD-609代码：	e3
最大工作频率：	2700 MHz	最小工作频率：
最高工作温度：	200 °C	最低工作温度：	-55 °C
射频/微波设备类型：	RF/MICROWAVE TERMINATION	端子面层：	Matte Tin (Sn) - with Nickel (Ni) barrier
Base Number Matches：	1

A150N50X4B 数据手册

Model A150N50X4B

Chip Termination

150 Watts, 50Ω

Description

The A150N50X4B is high performance Aluminum Nitride (AlN) chip

termination intended as a cost competitive alternative to Beryllium Oxide

(BeO). The termination is well suited to all cellular frequency bands such

as; AMPS, GSM, DCS, PCS, PHS and UMTS. The high power handling

makes the part ideal for terminating circulators, and for use in power

combiners. The termination is also RoHS compliant!

General Specifications

Resistive Element

Substrate

Thick film

AlN Ceramic

Features:

Terminal Finish

Operating

Temperature

Tolerance is 0.010”, unless otherwise specified. Designed to meet of exceed

applicable portions of MIL-E-5400. All dimensions in inches.

Matte Tin over Nickel Barrier

• RoHS Compliant

• 150 Watts

-55 to +200°C (see de rating chart)

• DC - 2.7 GHz

• AlN Ceramic

Electrical Specifications

Resistance Value:

Power:

50 Ohms, 2%

150 Watts

• Non-Nichrome Resistive

Element

Frequency Range:

DC – 2.7 GHz

• Low VSWR

>26dB to 2.0 GHz

>20dB to 2.7 GHz

Specification based on unit properly installed using suggested mounting instructions

Return Loss

• 100% Tested

and a 50 ohm nominal impedance. Specifications subject to change.

Outline Drawing

A150N50X4 (097) Rev E

USA/Canada:

Toll Free:

(315) 432-8909

(800) 544-2414

+44 2392-232392

Available on Tape

and Reel For Pick and

Place Manufacturing.

Europe:

中文翻译

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