Datasheet > A150N50X4E

A150N50X4E

更新时间： 2024-10-28 19:56:19

品牌	Logo	应用领域
安伦 - ANAREN		射频微波
页数	文件大小	规格书
2页	89K
描述
RF/Microwave Termination, 0MHz Min, 2700MHz Max, 50ohm, ROHS COMPLIANT PACKAGE-1

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技术参数
数据手册

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A150N50X4E 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
风险等级：	5.74	特性阻抗：	50 Ω
构造：	COMPONENT	最大输入功率 (CW)：	51.76 dBm
JESD-609代码：	e3	最大工作频率：	2700 MHz
最小工作频率：		最高工作温度：	200 °C
最低工作温度：	-50 °C	射频/微波设备类型：	RF/MICROWAVE TERMINATION
端子面层：	MATTE TIN OVER NICKEL	Base Number Matches：	1

A150N50X4E 数据手册

Model A150N50X4E

Chip Termination

150 Watts, 50Ω

Description

The A150N50X4E is high performance Aluminum Nitride (AlN) chip

termination intended as a cost competitive alternative to Beryllium Oxide

(BeO). The termination is well suited to all cellular frequency bands such

as; AMPS, GSM, DCS, PCS, PHS and UMTS. The high power handling

makes the part ideal for terminating circulators and for use in power

combiners. The termination is also RoHS compliant!

General Specifications

Features:

Resistive Element

Substrate

Thick film

• RoHS Compliant

• 150 Watts

AlN Ceramic

Terminal Finish

Operating Temperature

Tolerance is ±0.010”, unless otherwise specified. Designed to meet of exceed

applicable portions of MIL-E-5400. All dimensions in inches.

Matte Tin over Nickel Barrier

-50 to +200°C (see de rating chart)

• DC – 3.0 GHz

• AlN Ceramic

Electrical Specifications

• Non-Nichrome Resistive

Element

Resistance Value:

Power:

50 Ohms, ± 2%

150 Watts

• Low VSWR

Frequency Range:

DC –3.0 GHz

25dB DC – 2.0 GHz

20dB DC – 3.0 GHz

• 100% Tested

Return Loss

Specification based on unit properly installed using suggested mounting instructions

and a 50 ohm nominal impedance. Specifications subject to change.

Outline Drawing

UNLESS OTHERWISE SPECIFIED DIMENSIONS ARE IN INCHES

1 of 2

USA/Canada:

Toll Free:

(315) 432-8909

(800) 544-2414

+44 2392-232392

Europe:

中文翻译

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